型号 功能描述 生产厂家 企业 LOGO 操作
IRF840LCS

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description This new series of low charge HEXFET®power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirem

IRF

IRF840LCS

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

IRF840LCS

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

IRF840LCS

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th

VISHAYVishay Siliconix

威世威世科技公司

IRF840LCS

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRF840LCS

Power MOSFET

文件:156.42 Kbytes Page:2 Pages

TEL

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:231.4 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:231.4 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

KEXIN

科信电子

8A 500V N-channel Enhancement Mode Power MOSFET

文件:1.63311 Mbytes Page:12 Pages

WXDH

东海半导体

9Amps竊?00V N-CHANNEL MOSFET

文件:122.87 Kbytes Page:5 Pages

KIA

可易亚半导体

8A竊?00V N-CHANNEL MOSFET

文件:215.89 Kbytes Page:6 Pages

KIA

可易亚半导体

8A 500V N-CHANNEL MOSFET

文件:242.9 Kbytes Page:7 Pages

KIA

可易亚半导体

IRF840LCS产品属性

  • 类型

    描述

  • 型号

    IRF840LCS

  • 功能描述

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-2 14:54:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
IR
25+23+
TO-263
26984
绝对原装正品全新进口深圳现货
IR
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
INTERNATIONA
06+
原厂原装
9016
只做全新原装真实现货供应
VISHAY
24+/25+
D2-PAK(TO-263)
1000
原装正品现货库存价优
IOR
24+
TO220
30
IR
1923+
TO-263
6896
原装进口现货库存专业工厂研究所配单供货
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
25+
TO-263
90000
一级代理商进口原装现货、价格合理
VISHAY
10+
1000
TO-263-3 (D2PAK)

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