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位置：首页 > IC中文资料 > IRF734

IRF734价格

参考价格：￥1.9518

型号：IRF7341PBF 品牌：International 备注：这里有IRF734多少钱，2026年最近7天走势，今日出价，今日竞价，IRF734批发/采购报价，IRF734行情走势销售排行榜，IRF734报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF734

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

VISHAYVishay Siliconix

威世威世科技公司

IRF734

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRF734

Trans MOSFET N-CH 450V 4.9A 3-Pin(3+Tab) TO-220AB

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF7341

丝印代码：IRF7341；Generation V Technology

The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

UMW

友台半导体

IRF7341TR

丝印代码：IRF7341；Generation V Technology

The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

UMW

友台半导体

IRF7341TR

丝印代码：IRF7341；MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

EVVOSEMI

翊欧

IRF7342

丝印代码：IRF7342；Dual P-Channel MOSFET

 Generation V Technology  Ultra Low On-Resistance  Surface Mount  Dynamic dv/dt Rating  Fast Switching  Lead-Free  VDS (V)=-55V  RDS(ON) 105m (VGS =-10V) Features  RDS(ON) 170m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhanced thermal charac

UMW

友台半导体

IRF7342TR

丝印代码：IRF7342；Dual P-Channel MOSFET

 Generation V Technology  Ultra Low On-Resistance  Surface Mount  Dynamic dv/dt Rating  Fast Switching  Lead-Free  VDS (V)=-55V  RDS(ON) 105m (VGS =-10V) Features  RDS(ON) 170m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhanced thermal charac

UMW

友台半导体

IRF7342TR

丝印代码：IRF7342；Dual P-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V)=-55V RDS(ON)

EVVOSEMI

翊欧

IRF7343TR

丝印代码：IRF7343；Dual N P Channel MOSFET

Features. NCh Vos ESsV. Rosion

EVVOSEMI

翊欧

IRF7341

MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

EVVOSEMI

翊欧

IRF7341

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF7341GPBF

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

IRF

IRF7341GTRPbF

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

IRF

IRF7341PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

IRF

IRF7341Q

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 17

IRF

IRF7341QPBF

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

IRF

IRF7341QPBF

Advanced Process Technology

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

IRF

IRF7341QTRPBF

Advanced Process Technology

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

IRF

IRF7341TR

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF7341TRPBF

Dual N-Channel 60 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

VBSEMI

微碧半导体

IRF7342

Dual P-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V)=-55V RDS(ON)

EVVOSEMI

翊欧

IRF7342

Power MOSFET

VDSS = -55V RDS(on) = 0.105Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Po

IRF

IRF7342TRPBF

丝印代码：F7342；Dual P-Channel Enhancement Mode MOSFET

GENERAL FEATURES * Vos=-60V b =-38A * Roson

TECHPUBLIC

台舟电子

IRF7343

Dual N P Channel MOSFET

Features. NCh Vos ESsV. Rosion

EVVOSEMI

翊欧

IRF7343

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

IRF734PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

VISHAYVishay Siliconix

威世威世科技公司

IRF7341G

采用 SO-8 封装的 55V 双 N 沟道功率 MOSFET

INFINEON

英飞凌

IRF7341IPBF

HEXFET Power MOSFET

文件：138.32 Kbytes Page：7 Pages

IRF

IRF7341PBF

Generation V Technology

文件：163.97 Kbytes Page：7 Pages

IRF

IRF7341PBF_15

Generation V Technology

文件：163.97 Kbytes Page：7 Pages

IRF

IRF7341TRPBF

HEXFET짰 Power MOSFET

文件：163.98 Kbytes Page：7 Pages

IRF

IRF7342D2

FETKY MOSFET & Schottky Diode

文件：144.47 Kbytes Page：11 Pages

IRF

IRF7342D2PBF

FETKY MOSFET & Schottky Diode

文件：200.2 Kbytes Page：11 Pages

IRF

IRF7342D2PBF

Ideal For Buck Regulator Applications

文件：203.33 Kbytes Page：11 Pages

IRF

IRF7342D2PBF_15

Ideal For Buck Regulator Applications

文件：203.33 Kbytes Page：11 Pages

IRF

IRF7342PBF

Dual P Channel MOSFET

文件：337.75 Kbytes Page：8 Pages

INFINEON

英飞凌

IRF7342PBF

Generation V Technology

文件：164.57 Kbytes Page：7 Pages

IRF

IRF7342PBF

HEXFET짰 Power MOSFET (VDSS = -55V , RDS(on) = 0.105廓)

文件：159.18 Kbytes Page：7 Pages

IRF

IRF7342PBF

Generation V Technology

文件：164.57 Kbytes Page：7 Pages

IRF

IRF7342PBF_15

Generation V Technology

文件：164.57 Kbytes Page：7 Pages

IRF

IRF7342PBF-1

Industry-standard pinout SO-8 Package

文件：184.62 Kbytes Page：7 Pages

IRF

IRF7342PBF-1_15

Industry-standard pinout SO-8 Package

文件：184.62 Kbytes Page：7 Pages

IRF

IRF7342QPBF

HEXFET Power MOSFET

文件：183.84 Kbytes Page：7 Pages

IRF

IRF7342QPBF

Advanced Process Technology

文件：170.45 Kbytes Page：7 Pages

IRF

IRF7342QPBF_10

HEXFET짰 Power MOSFET

文件：170.45 Kbytes Page：7 Pages

IRF

IRF7342QTRPBF

Advanced Process Technology

文件：170.45 Kbytes Page：7 Pages

IRF

IRF7342QTRPBF

Dual P-Channel 6 0-V (D-S) MOSFET

文件：2.04915 Mbytes Page：9 Pages

VBSEMI

微碧半导体

IRF7342TRPBF

Dual P-Channel 6 0-V (D-S) MOSFET

文件：1.19403 Mbytes Page：9 Pages

VBSEMI

微碧半导体

IRF7342TRPBF

Generation V Technology

文件：164.57 Kbytes Page：7 Pages

IRF

IRF7343IPBF

HEXFET Power MOSFET

文件：210.58 Kbytes Page：10 Pages

IRF

IRF7343PBF

HEXFET Power MOSFET

文件：219.48 Kbytes Page：10 Pages

IRF

IRF7343PBF

DUAL N AND P CHANNEL MOSFET

文件：225.09 Kbytes Page：10 Pages

IRF

IRF7343PBF_15

DUAL N AND P CHANNEL MOSFET

文件：225.09 Kbytes Page：10 Pages

IRF

IRF7343QPBF

HEXFET POWER MOSFET

文件：226.63 Kbytes Page：10 Pages

IRF

IRF7343QPBF

Advanced Process Technology

文件：226.63 Kbytes Page：10 Pages

IRF

IRF7343QPBF

HEXFET Power MOSFET

文件：238.21 Kbytes Page：10 Pages

IRF

IRF7343QPBF_10

HEXFET POWER MOSFET

文件：226.63 Kbytes Page：10 Pages

IRF

IRF7343QPBF_15

Advanced Process Technology

文件：226.63 Kbytes Page：10 Pages

IRF

IRF7343QTRPBF

N- and P-Channel 60-V (D-S) MOSFET

文件：2.7831 Mbytes Page：14 Pages

VBSEMI

微碧半导体

IRF734产品属性

  • 类型

    描述

  • Minimum Operating Temperature：

    -55°C

  • Maximum Power Dissipation：

    74000mW

  • Maximum Operating Temperature：

    150°C

  • Maximum Gate Source Voltage：

    ±20V

  • Maximum Drain Source Voltage：

    450V

  • Maximum Continuous Drain Current：

    4.9A

  • Configuration：

    Single

  • Channel Type：

    N

  • Channel Mode：

    Enhancement

  • Category：

    Power MOSFET

IRF734供应商更多...

更新时间：2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IRF7343TRPBF
Infineon(英飞凌)
25+
SOIC-8_150mil
7589
全新原装现货,支持排单订货,可含税开票
询价
中天科工半导体（深圳）有限公司
IRF7341TRPBF
INFINEON/英飞凌
25+
8-SOIC
32000
INFINEON/英飞凌全新特价IRF7341TRPBF即刻询购立享优惠#长期有货
询价
深圳市正纳电子有限公司
IRF7341TRPBF
INFINEON
22+
SOIC-8_150mil
32000
原装正品可支持验货,欢迎咨询
询价
深圳市昌和盛利电子有限公司
IRF734
IR
26+
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市赛特兴科技有限公司
IRF7342TRPBF
INFINEON
23+
SOP8
5114
正规渠道,只有原装!
询价
深圳市毅创腾电子科技有限公司
IRF7342
IR
SOP
1800
专业分销全系列产品!绝对原装正品!量大可订!价格优
询价
深圳市富利微电子科技有限公司
IRF7343TRPBF
IR
25+
SOP-8
9975
保证进口原装现货假一赔十
询价
深圳市福田区绿盛电子商行
IRF7341
IR
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
深圳市振宏微科技有限公司
IRF7343TRPBF
TR
23+
SOP8
20000
原厂原装正品现货
询价
深圳诚思涵科技有限公司
IRF7341
IR
18+
9800
代理进口原装/实单价格可谈
询价

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IRF734规格书下载地址

IRF734参数引脚图相关

IRF734数据表相关新闻

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