IRF734技术资料参数威世库存现货价格Vishay-IC资料网

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IRF734价格

参考价格：￥1.9518

型号：IRF7341PBF 品牌：International 备注：这里有IRF734多少钱，2025年最近7天走势，今日出价，今日竞价，IRF734批发/采购报价，IRF734行情走势销售排行榜，IRF734报价。

型号	功能描述	生产厂家企业	LOGO
IRF734	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF734	Power MOSFET	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF734	Trans MOSFET N-CH 450V 4.9A 3-Pin(3+Tab) TO-220AB	ETC 知名厂家	ETC
IRF7341	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide	IRF	IRF
IRF7341	Generation V Technology The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa	UMW 友台半导体	UMW
IRF7341	MOSFET Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board	EVVOSEMI 翊欧	EVVOSEMI
IRF7341GPBF	HEXFET짰 Power MOSFET Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe	IRF	IRF
IRF7341GTRPbF	HEXFET짰 Power MOSFET Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe	IRF	IRF
IRF7341PBF	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,	IRF	IRF
IRF7341Q	HEXFET Power MOSFET Description Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 17	IRF	IRF
IRF7341QPBF	HEXFET짰 Power MOSFET Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe	IRF	IRF
IRF7341QPBF	Advanced Process Technology Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe	IRF	IRF
IRF7341QTRPBF	Advanced Process Technology Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe	IRF	IRF
IRF7341TR	HEXFET짰 Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide	IRF	IRF
IRF7341TR	MOSFET Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board	EVVOSEMI 翊欧	EVVOSEMI
IRF7341TR	Generation V Technology The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa	UMW 友台半导体	UMW
IRF7341TRPBF	Dual N-Channel 60 V (D-S) 175 째C MOSFET FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested	VBSEMI 微碧半导体	VBSEMI
IRF7342	Dual P-Channel MOSFET Generation V Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V)=-55V RDS(ON) 105m (VGS =-10V) Features RDS(ON) 170m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhanced thermal charac	UMW 友台半导体	UMW
IRF7342	Dual P-Channel MOSFET Features Generation V Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V)=-55V RDS(ON)	EVVOSEMI 翊欧	EVVOSEMI
IRF7342	Power MOSFET VDSS = -55V RDS(on) = 0.105Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Po	IRF	IRF
IRF7342TR	Dual P-Channel MOSFET Generation V Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V)=-55V RDS(ON) 105m (VGS =-10V) Features RDS(ON) 170m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhanced thermal charac	UMW 友台半导体	UMW
IRF7342TR	Dual P-Channel MOSFET Features Generation V Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V)=-55V RDS(ON)	EVVOSEMI 翊欧	EVVOSEMI
IRF7342TRPBF	Dual P-Channel Enhancement Mode MOSFET GENERAL FEATURES * Vos=-60V b =-38A * Roson	TECHPUBLIC 台舟电子	TECHPUBLIC
IRF7343	Dual N P Channel MOSFET Features. NCh Vos ESsV. Rosion	EVVOSEMI 翊欧	EVVOSEMI
IRF7343	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi	IRF	IRF
IRF7343TR	Dual N P Channel MOSFET Features. NCh Vos ESsV. Rosion	EVVOSEMI 翊欧	EVVOSEMI
IRF734PBF	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF7341G	采用 SO-8 封装的 55V 双 N 沟道功率 MOSFET	Infineon 英飞凌	Infineon
IRF7341IPBF	HEXFET Power MOSFET 文件：138.32 Kbytes Page：7 Pages	IRF	IRF
IRF7341PBF	Generation V Technology 文件：163.97 Kbytes Page：7 Pages	IRF	IRF
IRF7341PBF_15	Generation V Technology 文件：163.97 Kbytes Page：7 Pages	IRF	IRF
IRF7341TRPBF	HEXFET짰 Power MOSFET 文件：163.98 Kbytes Page：7 Pages	IRF	IRF
IRF7342D2	FETKY MOSFET & Schottky Diode 文件：144.47 Kbytes Page：11 Pages	IRF	IRF
IRF7342D2PBF	FETKY MOSFET & Schottky Diode 文件：200.2 Kbytes Page：11 Pages	IRF	IRF
IRF7342D2PBF	Ideal For Buck Regulator Applications 文件：203.33 Kbytes Page：11 Pages	IRF	IRF
IRF7342D2PBF_15	Ideal For Buck Regulator Applications 文件：203.33 Kbytes Page：11 Pages	IRF	IRF
IRF7342PBF	Dual P Channel MOSFET 文件：337.75 Kbytes Page：8 Pages	Infineon 英飞凌	Infineon
IRF7342PBF	Generation V Technology 文件：164.57 Kbytes Page：7 Pages	IRF	IRF
IRF7342PBF	HEXFET짰 Power MOSFET (VDSS = -55V , RDS(on) = 0.105廓) 文件：159.18 Kbytes Page：7 Pages	IRF	IRF
IRF7342PBF	Generation V Technology 文件：164.57 Kbytes Page：7 Pages	IRF	IRF
IRF7342PBF_15	Generation V Technology 文件：164.57 Kbytes Page：7 Pages	IRF	IRF
IRF7342PBF-1	Industry-standard pinout SO-8 Package 文件：184.62 Kbytes Page：7 Pages	IRF	IRF
IRF7342PBF-1_15	Industry-standard pinout SO-8 Package 文件：184.62 Kbytes Page：7 Pages	IRF	IRF
IRF7342QPBF	HEXFET Power MOSFET 文件：183.84 Kbytes Page：7 Pages	IRF	IRF
IRF7342QPBF	Advanced Process Technology 文件：170.45 Kbytes Page：7 Pages	IRF	IRF
IRF7342QPBF_10	HEXFET짰 Power MOSFET 文件：170.45 Kbytes Page：7 Pages	IRF	IRF
IRF7342QTRPBF	Advanced Process Technology 文件：170.45 Kbytes Page：7 Pages	IRF	IRF
IRF7342QTRPBF	Dual P-Channel 6 0-V (D-S) MOSFET 文件：2.04915 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
IRF7342TRPBF	Dual P-Channel 6 0-V (D-S) MOSFET 文件：1.19403 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
IRF7342TRPBF	Generation V Technology 文件：164.57 Kbytes Page：7 Pages	IRF	IRF
IRF7343IPBF	HEXFET Power MOSFET 文件：210.58 Kbytes Page：10 Pages	IRF	IRF
IRF7343PBF	HEXFET Power MOSFET 文件：219.48 Kbytes Page：10 Pages	IRF	IRF
IRF7343PBF	DUAL N AND P CHANNEL MOSFET 文件：225.09 Kbytes Page：10 Pages	IRF	IRF
IRF7343PBF_15	DUAL N AND P CHANNEL MOSFET 文件：225.09 Kbytes Page：10 Pages	IRF	IRF
IRF7343QPBF	HEXFET POWER MOSFET 文件：226.63 Kbytes Page：10 Pages	IRF	IRF
IRF7343QPBF	Advanced Process Technology 文件：226.63 Kbytes Page：10 Pages	IRF	IRF
IRF7343QPBF	HEXFET Power MOSFET 文件：238.21 Kbytes Page：10 Pages	IRF	IRF
IRF7343QPBF_10	HEXFET POWER MOSFET 文件：226.63 Kbytes Page：10 Pages	IRF	IRF
IRF7343QPBF_15	Advanced Process Technology 文件：226.63 Kbytes Page：10 Pages	IRF	IRF
IRF7343QTRPBF	N- and P-Channel 60-V (D-S) MOSFET 文件：2.7831 Mbytes Page：14 Pages	VBSEMI 微碧半导体	VBSEMI

IRF734产品属性

类型
描述
型号
IRF734
功能描述
MOSFET N-CH 450V 4.9A TO-220AB
RoHS
否
类别
分离式半导体产品 >> FET - 单
系列
-
标准包装
1,000
系列
MESH OVERLAY™ FET
型
MOSFET N 通道，金属氧化物 FET
特点
逻辑电平门
漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
C
18A 开态Rds（最大）@ Id, Vgs @ 25°
C
180 毫欧 @ 9A，10V Id 时的
Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
Vgs
72nC @ 10V 输入电容(Ciss) @
Vds
1560pF @ 25V 功率 -
最大
40W
安装类型
通孔
封装/外壳
TO-220-3 整包
供应商设备封装
TO-220FP
包装
管件

IRF734供应商更多...

更新时间：2025-11-20 13:52:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市昊创电子有限公司	IRF7342PBF	IR	13+	NA	100	终端备货原装现货-军工器件供应商	询价
瀚佳科技(深圳)有限公司	IRF7343TRPBF	IR	24+	SOP8	65200	一级代理/放心采购	询价
深圳市芯皇电子有限公司	IRF7342	IR	23+	SOP8	6000	专业配单保证原装正品假一罚十	询价
深圳市明嘉莱科技有限公司	IRF7341TRPBF	IR	25+	8-SOIC	880000	明嘉莱只做原装正品现货	询价
深圳市星佑电子有限公司	IRF7342QTRPBF	IR	18+	SOP8	5600	一个电话就有货,价格很低	询价
深圳市亿芯隆邦电子有限公司	IRF7341TRPBF	INFINEON/英飞凌	25+		590000	只做原厂原装正品	询价
深圳市云美电子科技有限公司	IRF7341TRPBF	INFINEON/英飞凌	24+	SOP8	42000	只做原装进口现货	询价
深圳市亿智腾科技有限公司	IRF7341TRPBF	IR	24+	SOP8	6430	原装现货/欢迎来电咨询	询价
深圳市中联芯电子有限公司	IRF7342TRPBF	INFINEON/英飞凌	24+	SOP-8	16000	原装正品优势库存现货供应	询价
上海鑫科润电子科技有限公司	IRF7341Q	IOR	2004	SOP8	4000	原装现货海量库存欢迎咨询	询价

IRF734芯片相关品牌

IRF734规格书下载地址

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IRF734数据表相关新闻

IRF7341TRPBF原装现货
IRF7341TRPBF原装正品
2021-8-9
IRF7343TRPBF公司大量原装现货/长期供应
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-7
IRF7342QTRPBF公司大量原装现货/长期供应
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-7
IRF7324TRPBF公司大量原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-25
IRF7321D2TRPBF公司大量原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-25
IRF7316TRPBF公司大量原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-25

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IRF734价格

IRF734产品属性

IRF734供应商更多...

IRF734芯片相关品牌

IRF734规格书下载地址

IRF734参数引脚图相关

IRF734数据表相关新闻

IRF7341TRPBF原装现货

IRF7343TRPBF公司大量原装现货/长期供应

IRF7342QTRPBF公司大量原装现货/长期供应

IRF7324TRPBF公司大量原装正品现货/随时可以发货

IRF7321D2TRPBF公司大量原装正品现货/随时可以发货

IRF7316TRPBF公司大量原装正品现货/随时可以发货

DdatasheetPDF页码索引