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IRF7341IPBF

HEXFET Power MOSFET

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IRF

IRF7341IPBF

HEXFET Power MOSFET

INFINEON

英飞凌

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

SIDE-LOOK PACKAGE PIN PHOTODIODE

Description The MID-7341C is a photodiode mounted in water clear plastic package and suitable for the variety wavelength. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast switching time

UOT

东贝光电

SMT Power Inductors

[Coilcraft] The MSS7341 series is ideal for applications requiring high power and high efficiency such as notebook computers, wireless phones, PDAs and other handheld products. It provides excellent current handling capability in a rugged, low cost part. These magnetically shielded power inducto

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET 1-ch OCMOS FET

DESCRIPTION The PS7341-1B and PS7341L-1B are solid state relays containing a GaAs LED on the light emitting side (input side) and normally close (N.C.) contact MOS FETs on the output side. They are suitable for analog signal control because of their low offset and high linearity. The PS7341L-1B

NEC

瑞萨

COMS Digital decoding IC for Compact Disc

COMS Digital decoding IC for Compact Disc

PHILIPS

飞利浦

IRF7341IPBF产品属性

  • 类型

    描述

  • 型号

    IRF7341IPBF

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-13 22:30:00
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