Description

These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Benefits

• Advanced Process Technology

• Dual N-Channel MOSFET

• Ultra Low On-Resistance

• 175°C Operating Temperature

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free