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位置：首页 > IC中文资料第1071页 > IRF7341

IRF7341价格

参考价格：￥1.9518

型号：IRF7341PBF 品牌：International 备注：这里有IRF7341多少钱，2025年最近7天走势，今日出价，今日竞价，IRF7341批发/采购报价，IRF7341行情走势销售排行榜，IRF7341报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF7341

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

International Rectifier

IRF
IRF7341

Generation V Technology

The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
IRF7341

MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
IRF7341GPBF

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

IRF

International Rectifier

IRF
IRF7341GTRPbF

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

IRF

International Rectifier

IRF
IRF7341PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

IRF

International Rectifier

IRF
IRF7341Q

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 17

IRF

International Rectifier

IRF
IRF7341QPBF

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

IRF

International Rectifier

IRF
IRF7341QPBF

Advanced Process Technology

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

IRF

International Rectifier

IRF
IRF7341QTRPBF

Advanced Process Technology

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

IRF

International Rectifier

IRF
IRF7341TR

Generation V Technology

The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
IRF7341TR

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

International Rectifier

IRF
IRF7341TR

MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
IRF7341TRPBF

Dual N-Channel 60 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF7341IPBF

HEXFET Power MOSFET

文件：138.32 Kbytes Page：7 Pages

IRF

International Rectifier

IRF
IRF7341PBF

Generation V Technology

文件：163.97 Kbytes Page：7 Pages

IRF

International Rectifier

IRF
IRF7341PBF_15

Generation V Technology

文件：163.97 Kbytes Page：7 Pages

IRF

International Rectifier

IRF
IRF7341TRPBF

HEXFET짰 Power MOSFET

文件：163.98 Kbytes Page：7 Pages

IRF

International Rectifier

IRF
ADV7341

Multiformat Video Encoder, Six 12-Bit Noise Shaped Video짰 DACS

FEATURES 74.25 MHz 20-/30-bit high definition input support Compliant with SMPTE 274 M (1080i), 296 M (720p), and 240 M (1035i) 6 Noise Shaped Video(NSV)12-bit video DACs 16× (216 MHz) DAC oversampling for SD 8× (216 MHz) DAC oversampling for ED 4× (297

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADV7341BSTZ

Multiformat Video Encoder, Six 12-Bit Noise Shaped Video짰 DACS

FEATURES 74.25 MHz 20-/30-bit high definition input support Compliant with SMPTE 274 M (1080i), 296 M (720p), and 240 M (1035i) 6 Noise Shaped Video(NSV)12-bit video DACs 16× (216 MHz) DAC oversampling for SD 8× (216 MHz) DAC oversampling for ED 4× (297

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADV7341EBZ

Multiformat Video Encoder, Six 12-Bit Noise Shaped Video짰 DACS

FEATURES 74.25 MHz 20-/30-bit high definition input support Compliant with SMPTE 274 M (1080i), 296 M (720p), and 240 M (1035i) 6 Noise Shaped Video(NSV)12-bit video DACs 16× (216 MHz) DAC oversampling for SD 8× (216 MHz) DAC oversampling for ED 4× (297

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
7341

.187˝ Diameter Ground Pins – Female

文件：130.199 Kbytes Page：1 Pages

HeycoHeyco.

海科

Heyco
7341

Wire-Thread-Inserts

文件：102.37 Kbytes Page：3 Pages

V-COIL

V-COIL THREAD SYSTEM

V-COIL

IRF7341产品属性

  • 类型

    描述

  • 型号

    IRF7341

  • 制造商

    International Rectifier

  • 功能描述

    Trans MOSFET N-CH 55V 4.7A 8-Pin SOIC

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET DUAL NN LOGIC SO-8

IRF7341供应商更多...

更新时间：2025-8-5 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IRF7341TR
IR
24+
NA/
3266
原装现货,当天可交货,原型号开票
询价
深圳市高捷芯城科技有限公司
IRF7341TRPBF
Infineon(英飞凌)
24+
SOP8
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
中天科工半导体（深圳）有限公司
IRF7341TRPBF
INFINEON/英飞凌
25+
8-SOIC
32000
INFINEON/英飞凌全新特价IRF7341TRPBF即刻询购立享优惠#长期有货
询价
深圳市凌旭科技有限公司
IRF7341Q
IR
2016+
SOP8
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
IRF7341TRPBF
INFINEON
23+
K-B
416210
只有原装,请来电咨询
询价
深圳市纳艾斯科技有限公司
IRF7341PBF
IR
24+
SOP-8
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市科芯源微电子有限公司
IRF7341TRPBF
INFINEON/英飞凌
25+
SOP-8
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市金芯世纪电子有限公司
IRF7341QTRPBF
IR
22+
SOP-8
100000
代理渠道/只做原装/可含税
询价
深圳市盈慧通电子有限公司
IRF7341GTRPBF
Infineon(英飞凌)
2511
标准封装
7000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
深圳市联世界科技有限公司
IRF7341TRPBF
IR
24+/25+
SOP8
2000
原装正品现货库存价优
询价

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