丝印代码：IRF7341；Generation V Technology

The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

丝印代码：IRF7341；MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

丝印代码：IRF7341；Generation V Technology

The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

采用 SO-8 封装的 55V 双 N 通道 HEXFET 功率 MOSFET

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 17

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

Advanced Process Technology

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

Advanced Process Technology

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Dual N-Channel 60 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

HEXFET Power MOSFET

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HEXFET Power MOSFET

Generation V Technology

文件：163.97 Kbytes Page：7 Pages

Generation V Technology

文件：163.97 Kbytes Page：7 Pages

HEXFET Power MOSFET

HEXFET짰 Power MOSFET

文件：163.98 Kbytes Page：7 Pages

SIDE-LOOK PACKAGE PIN PHOTODIODE

Description The MID-7341C is a photodiode mounted in water clear plastic package and suitable for the variety wavelength. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast switching time

SMT Power Inductors

[Coilcraft] The MSS7341 series is ideal for applications requiring high power and high efficiency such as notebook computers, wireless phones, PDAs and other handheld products. It provides excellent current handling capability in a rugged, low cost part. These magnetically shielded power inducto

HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET 1-ch OCMOS FET

DESCRIPTION The PS7341-1B and PS7341L-1B are solid state relays containing a GaAs LED on the light emitting side (input side) and normally close (N.C.) contact MOS FETs on the output side. They are suitable for analog signal control because of their low offset and high linearity. The PS7341L-1B

COMS Digital decoding IC for Compact Disc

COMS Digital decoding IC for Compact Disc