HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Generation V Technology

The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

采用 SO-8 封装的 55V 双 N 通道 HEXFET 功率 MOSFET

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 17

HEXFET짰 Power MOSFET

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

Advanced Process Technology

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

Advanced Process Technology

Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

Generation V Technology

The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

Dual N-Channel 60 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

HEXFET Power MOSFET

HEXFET Power MOSFET

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Generation V Technology

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Generation V Technology

文件：163.97 Kbytes Page：7 Pages

HEXFET Power MOSFET

HEXFET짰 Power MOSFET

文件：163.98 Kbytes Page：7 Pages

Multiformat Video Encoder, Six 12-Bit Noise Shaped Video짰 DACS

FEATURES 74.25 MHz 20-/30-bit high definition input support Compliant with SMPTE 274 M (1080i), 296 M (720p), and 240 M (1035i) 6 Noise Shaped Video(NSV)12-bit video DACs 16× (216 MHz) DAC oversampling for SD 8× (216 MHz) DAC oversampling for ED 4× (297

Multiformat Video Encoder, Six 12-Bit Noise Shaped Video짰 DACS

FEATURES 74.25 MHz 20-/30-bit high definition input support Compliant with SMPTE 274 M (1080i), 296 M (720p), and 240 M (1035i) 6 Noise Shaped Video(NSV)12-bit video DACs 16× (216 MHz) DAC oversampling for SD 8× (216 MHz) DAC oversampling for ED 4× (297

Multiformat Video Encoder, Six 12-Bit Noise Shaped Video짰 DACS

FEATURES 74.25 MHz 20-/30-bit high definition input support Compliant with SMPTE 274 M (1080i), 296 M (720p), and 240 M (1035i) 6 Noise Shaped Video(NSV)12-bit video DACs 16× (216 MHz) DAC oversampling for SD 8× (216 MHz) DAC oversampling for ED 4× (297

Wire-Thread-Inserts

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.187˝ Diameter Ground Pins – Female

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