Adavanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Dual N-Channel 20-V (D-S) MOSFET

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T- Subminiature Lamps

Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

FIBRE CHANNEL Dual Transformer

FIBRE CHANNEL Dual Transformer • Designed for use with 75Ω Coaxial or 150Ω STP Cable • Fast rise time and low baseline wander

Miniature Rocker Lever Handle Switches

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7000 SERIES/HIGH RELIABILITY REED RELAYS

文件：1.39554 Mbytes Page：4 Pages