型号 功能描述 生产厂家 企业 LOGO 操作

Low Conduction Losses

Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

IRF

DirectFETPower MOSFET 

Description The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

DirectFETPower MOSFET 

Description The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

LAN DISCRETE TRANSFORMER MODULES

LAN FILTERED CONNECTORS LAN GIGABIT IC CROSS REFERENCE LAN 10/100BASE-TX IC CROSS REFERENCE LAN 10BASE-T IC CROSS REFERENCE

pulse

DC Motor Forward/Reverse Dual Speed Electronic Governors

■ Overview The AN6608, the AN6609N and the AN6609NS are the electronic governors which incorporate the forward/reverse rotation and double speed controls of the DC-motors used for radio/cassette tape recorder, and the functions such as fast forward, rewind, brake, and pause. They are also availab

Panasonic

松下

DC Motor Forward/Reverse Dual Speed Electronic Governors

■ Overview The AN6608, the AN6609N and the AN6609NS are the electronic governors which incorporate the forward/reverse rotation and double speed controls of the DC-motors used for radio/cassette tape recorder, and the functions such as fast forward, rewind, brake, and pause. They are also availab

Panasonic

松下

Selecting the Best JFET for Your Application

文件:17.56262 Mbytes Page:53 Pages

Fairchild

仙童半导体

Spindle Motor Driver for CD/MD

文件:76.58 Kbytes Page:2 Pages

ROHM

罗姆

IRF6609TR产品属性

  • 类型

    描述

  • 型号

    IRF6609TR

  • 功能描述

    MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-27 8:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
21+
DIRECTFET? MT
1000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
IRF
23+
SOP-8
8650
受权代理!全新原装现货特价热卖!
IR
24+
原厂封装
964
原装现货假一罚十
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
IR
24+
NA/
3430
原装现货,当天可交货,原型号开票
IR
10+
DirectFET
890
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
21+
DIRECTFET
30000
百域芯优势 实单必成 可开13点增值税
IR
22+
QFN
8000
原装正品支持实单
IR
24+
DirectFETtradeIso
7500
IR
23+
DIRECTFET
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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