型号 功能描述 生产厂家 企业 LOGO 操作
IRF6609TR1

Low Conduction Losses

Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

IRF

DirectFETPower MOSFET 

Description The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

IRF6609TR1产品属性

  • 类型

    描述

  • 型号

    IRF6609TR1

  • 功能描述

    MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-2 11:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
DIRECTFET
50000
全新原装正品现货,支持订货
IRF
22+
SOP-8
20000
公司只做原装 品质保障
IR
24+
DirectFETtradeIso
7500
IR
10+
DirectFET
890
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon Technologies
22+
DirectFET? Isometric MT
9000
原厂渠道,现货配单
IOR
24+
DIRECTFET
5000
只做原装公司现货
IR
22+
QFN
8000
原装正品支持实单
IR
25+
DIRECTFET
10000
原装现货假一罚十
IR
24+
65230
IR
1923+
DIRECTFET
5000
正品原装品质假一赔十

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