位置：首页 > IC中文资料第6520页 > IRF6609TR1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF6609TR1 | Low Conduction Losses Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge | IRF |   | |
DirectFETPower MOSFET Description The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | |
IRF6609TR1产品属性
- 类型
描述
- 型号
IRF6609TR1
- 功能描述
MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
23+ |
DIRECTFET |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+ |
DIRECTFET |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
24+ |
DIRECTFET |
60000 |
全新原装现货 |
|||
IR |
24+ |
65230 |
|||||
IR |
21+ |
DIRECTFET |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
Infineon Technologies |
23+ |
DirectFET? Isometric MT |
9000 |
原装正品，支持实单 |
|||
IRF |
21+ |
SOP-8 |
10000 |
原装现货假一罚十 |
IRF6609TR1芯片相关品牌
IRF6609TR1规格书下载地址
IRF6609TR1参数引脚图相关
- l101
- l100
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- IRF6644
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IRF6609TR1数据表相关新闻
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DdatasheetPDF页码索引
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