IRF640S价格

参考价格:¥3.4662

型号:IRF640SPBF 品牌:VISHAY 备注:这里有IRF640S多少钱,2025年最近7天走势,今日出价,今日竞价,IRF640S批发/采购报价,IRF640S行情走势销售排行榜,IRF640S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF640S

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

Philips

飞利浦

IRF640S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

IRF640S

Power MOSFET

FEATURES • Surface mount • Low-profile through-hole • Available in tape and reel • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

VishayVishay Siliconix

威世科技

IRF640S

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost effectiveness. Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape &

IRF

IRF640S

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF640S

N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAYprocess. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on)= 0.150Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

IRF640S

N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

STMICROELECTRONICS

意法半导体

IRF640S

Power MOSFET

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Surface mount • Low-profile through-hole • Available in tape and reel • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世科技

Power MOSFET

VishayVishay Siliconix

威世科技

Power MOSFET

文件:237.05 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:237.05 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:237.05 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

ROD SEALS

DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

FRANCEJOINT

3M??Scotch짰 Transparent Film Tape 640

文件:567.23 Kbytes Page:6 Pages

3M

MINIATURE FUSEHOLDERS

文件:113.57 Kbytes Page:1 Pages

Littelfuse

力特

Quartz Stability

文件:141.46 Kbytes Page:3 Pages

OSCILENT

PULSE TRANSFORMERS

文件:155.55 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

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IRF640S产品属性

  • 类型

    描述

  • 型号

    IRF640S

  • 功能描述

    MOSFET N-Chan 200V 18 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-23 14:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO263-2(D2-PAK )
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
Vishay(威世)
2511
TO-263
36000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
IR
24+
D2-Pak
27500
原装正品,价格最低!
IR
17+
TO-263
82
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY
24+/25+
D2-PAK(TO-263)
2400
原装正品现货库存价优
VISHAY
24+
TO-263
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
VISHAY
11+
TO-263-3 (D2PAK)
100
15年光格 只做原装正品
IR
23+
TO263
45000
原厂授权一级代理,专业海外优势订货,价格优势、品种
VISHAY/威世
24+
TO-263-3
100
只做原装,欢迎询价,量大价优
ST
SOT-263
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S

IRF640S数据表相关新闻