IRF640S价格

参考价格:¥3.4662

型号:IRF640SPBF 品牌:VISHAY 备注:这里有IRF640S多少钱,2026年最近7天走势,今日出价,今日竞价,IRF640S批发/采购报价,IRF640S行情走势销售排行榜,IRF640S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF640S

N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAYprocess. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on)= 0.150Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

IRF640S

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

Philips

飞利浦

IRF640S

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost effectiveness. Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape &

IRF

IRF640S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

IRF640S

Power MOSFET

FEATURES • Surface mount • Low-profile through-hole • Available in tape and reel • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

VishayVishay Siliconix

威世威世科技公司

IRF640S

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF640S

N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

STMICROELECTRONICS

意法半导体

IRF640S

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface mount • Low-profile through-hole • Available in tape and reel • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:237.05 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:237.05 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:237.05 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

ROD SEALS

DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

FRANCEJOINT

MINIATURE FUSEHOLDERS

文件:113.57 Kbytes Page:1 Pages

Littelfuse

力特

Quartz Stability

文件:141.46 Kbytes Page:3 Pages

OSCILENT

3M??Scotch짰 Transparent Film Tape 640

文件:567.23 Kbytes Page:6 Pages

3M

PULSE TRANSFORMERS

文件:155.55 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF640S产品属性

  • 类型

    描述

  • 型号

    IRF640S

  • 功能描述

    MOSFET N-Chan 200V 18 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-2 11:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
TO263
30000
只做原装正品
VISHAY(威世)
24+
N/A
12980
原装正品现货支持实单
IR
23+
TO263
45000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
VISHAY/威世
23+
明嘉莱只做原装正品现货
2510000
TO-263-2
PHI
2447
TO263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR
23+
TO-263
62883
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
23+
TO-263
50000
全新原装正品现货,支持订货
IR
23+
TO/263
7000
绝对全新原装!100%保质量特价!请放心订购!
IR
24+
D2-Pak
8866

IRF640S数据表相关新闻