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IRF640S价格
参考价格:¥3.4662
型号:IRF640SPBF 品牌:VISHAY 备注:这里有IRF640S多少钱,2025年最近7天走势,今日出价,今日竞价,IRF640S批发/采购报价,IRF640S行情走势销售排行榜,IRF640S报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRF640S | N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAYprocess. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on)= 0.150Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ | STMICROELECTRONICS 意法半导体 | ||
IRF640S | N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. | Philips 飞利浦 | ||
IRF640S | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost effectiveness. Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & | IRF | ||
IRF640S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRF640S | Power MOSFET FEATURES • Surface mount • Low-profile through-hole • Available in tape and reel • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRF640S | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | ||
Power MOSFET FEATURES • Surface mount • Low-profile through-hole • Available in tape and reel • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:237.05 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:237.05 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:237.05 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
ROD SEALS DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders | FRANCEJOINT | |||
MINIATURE FUSEHOLDERS 文件:113.57 Kbytes Page:1 Pages | Littelfuse 力特 | |||
Quartz Stability 文件:141.46 Kbytes Page:3 Pages | OSCILENT | |||
3M??Scotch짰 Transparent Film Tape 640 文件:567.23 Kbytes Page:6 Pages | 3M | |||
PULSE TRANSFORMERS 文件:155.55 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |
IRF640S产品属性
- 类型
描述
- 型号
IRF640S
- 功能描述
MOSFET N-Chan 200V 18 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
23+ |
TO263 |
30 |
原装现货假一赔十 |
|||
VISHAY(威世) |
23+ |
N/A |
23500 |
最新到货,只做原装进口 |
|||
ST |
24+ |
TO-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
23+ |
TO-363 |
7520 |
专注配单,只做原装进口现货 |
|||
VISHAY |
25+ |
TO-263 |
6000 |
原厂原装,价格优势 |
|||
IR |
24+ |
D2-Pak |
27500 |
原装正品,价格最低! |
|||
IR |
22+ |
TO263 |
30000 |
只做原装正品 |
|||
SILICONIXVISHAY |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
ir |
2023+ |
原厂封装 |
50000 |
原装现货 |
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IRF640S规格书下载地址
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