IRF640S价格

参考价格:¥3.4662

型号:IRF640SPBF 品牌:VISHAY 备注:这里有IRF640S多少钱,2025年最近7天走势,今日出价,今日竞价,IRF640S批发/采购报价,IRF640S行情走势销售排行榜,IRF640S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF640S

N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAYprocess. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on)= 0.150Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

IRF640S

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

Philips

飞利浦

IRF640S

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost effectiveness. Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape &

IRF

IRF640S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

IRF640S

Power MOSFET

FEATURES • Surface mount • Low-profile through-hole • Available in tape and reel • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

VishayVishay Siliconix

威世威世科技公司

IRF640S

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF640S

N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

STMICROELECTRONICS

意法半导体

IRF640S

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface mount • Low-profile through-hole • Available in tape and reel • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:237.05 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:237.05 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:237.05 Kbytes Page:10 Pages

VishayVishay Siliconix

威世威世科技公司

ROD SEALS

DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

FRANCEJOINT

MINIATURE FUSEHOLDERS

文件:113.57 Kbytes Page:1 Pages

Littelfuse

力特

Quartz Stability

文件:141.46 Kbytes Page:3 Pages

OSCILENT

3M??Scotch짰 Transparent Film Tape 640

文件:567.23 Kbytes Page:6 Pages

3M

PULSE TRANSFORMERS

文件:155.55 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF640S产品属性

  • 类型

    描述

  • 型号

    IRF640S

  • 功能描述

    MOSFET N-Chan 200V 18 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay(威世)
24+
NA/
8735
原厂直销,现货供应,账期支持!
VISHAY/威世
22+
TO-263-3
100000
代理渠道/只做原装/可含税
ST/意法
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
INFINEON/英飞凌
25+
SOT-263
32000
INFINEON/英飞凌全新特价IRF640STRPBF即刻询购立享优惠#长期有货
IR
17+
TO-263
82
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY
24+/25+
D2-PAK(TO-263)
2400
原装正品现货库存价优
IR
22+
TO263
30000
只做原装正品
IR
23+
TO-263
10000
专做原装正品,假一罚百!
IR
25+
15
公司优势库存 热卖中!!
Vishay
23+
2400
加QQ:78517935原装正品有单必成

IRF640S数据表相关新闻