DESCRIPTION

This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAYprocess. This technology matches and improves the performances compared with

standard parts from various sources.

■ TYPICAL RDS(on)= 0.150Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ HIGH CURRENT SWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.