2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET

Description This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This power MOSFET is designed for applications such

Ease of Paralleling

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

N-Channel Mosfet Transistor

• DESCRITION • Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. • FEATURES • Low RDS(on) • VGS Rated at ±30V • Silicon Gate for Fast Switching Speed • Rugged • Low Drive Requirements

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

hexfet power mosfet

HEXFET Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Surface Mount • Ease of Paralleling • Simple Drive Requirements • Lead-Free

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dv/dt rating;

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

HEXFET Power MOSFET

HEXFET Power MOSFET • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead-Free

Power MOSFET

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Power MOSFET

文件：217.94 Kbytes Page：9 Pages

Power MOSFET

文件：217.94 Kbytes Page：9 Pages

Quad Operational Amplifier and Adjustable Reference

文件：857.37 Kbytes Page：17 Pages

Quad Operational Amplifier and Adjustable Reference

文件：857.37 Kbytes Page：17 Pages

Quad Operational Amplifier and Adjustable Reference

文件：857.37 Kbytes Page：17 Pages

Quad Operational Amplifier and Adjustable Reference

文件：857.37 Kbytes Page：17 Pages

Quad Operational Amplifier and Adjustable Reference

文件：857.37 Kbytes Page：17 Pages