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型号 功能描述 生产厂家 企业 LOGO 操作
IRF612

N-Channel Power MOSFETs, 3.5A, 150-200V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

FAIRCHILD

仙童半导体

IRF612

N-Channel Power MOSFETs 3.5 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF612

N-Channel Power MOSFETs 3.5 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF612

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF612

isc N-Channel MOSFET Transistor

文件:45.08 Kbytes Page:2 Pages

ISC

无锡固电

IRF612

N-Channel Power Mosfets

文件:344.15 Kbytes Page:5 Pages

ARTSCHIP

IRF612

Trans MOSFET N-CH 200V 2A 3-Pin(3+Tab) TO-220AB

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Dual-Channel Comparator and Reference

文件:244.46 Kbytes Page:10 Pages

NSC

国半

Dual-Channel Comparator and Reference

文件:244.46 Kbytes Page:10 Pages

NSC

国半

Dual-Channel Comparator and Reference

文件:244.46 Kbytes Page:10 Pages

NSC

国半

Dual-Channel Comparator and Reference

文件:244.46 Kbytes Page:10 Pages

NSC

国半

Dual-Channel Comparator and Reference

文件:244.46 Kbytes Page:10 Pages

NSC

国半

IRF612产品属性

  • 类型

    描述

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    20000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    200V

  • Maximum Continuous Drain Current:

    2A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-5-24 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
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IR
18+
TO-220
2000
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IR
2022+
SOP-8
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IR
23+
SOP-8
4560
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IR
1415+
TO-263
28500
全新原装正品,优势热卖

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