Power MOSFET(Vdss=-20V, Rds(on)=0.135ohm)

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ● U

Ultra Low On-Resistance

文件：134.47 Kbytes Page：9 Pages

Power MOSFET(Vdss=-20V, Rds(on)=0.135ohm)

Ultra Low On-Resistance

文件：168.9 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：134.47 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：168.9 Kbytes Page：9 Pages

PNP SILICON POWER TRANSISTORS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. Features • Switching Regulators • Inverters • Solenoid an

8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

Silicon Power Rectifier Diode, 6 Amp

Description and Features: The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: ● High Surge Current Capability ● High Voltage Available ● Designed for a

Video Switch, Bipolar IC

The TDA5850 is a switchable video amplifier with connections for the French and IEC VTR standards. Features ● Standard connection for VTR (CCIR) and Peri TV sets ● Input clamping ● Positve and negative video outputs