PNP SILICON POWER TRANSISTORS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. Features • Switching Regulators • Inverters • Solenoid an

8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

SWITCHMODE Series PNP Silicon Power Transistors

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

8.0 A, 300 V PNP Bipolar Power Transistor

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. • Pb-Free Packages are Available;

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 300V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS

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Switch-mode Series PNP Silicon Power Transistors

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8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS

文件：104.82 Kbytes Page：8 Pages

Switch-mode Series PNP Silicon Power Transistors

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Switch-mode Series PNP Silicon Power Transistors

文件：104.24 Kbytes Page：8 Pages

8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS

文件：104.82 Kbytes Page：8 Pages

封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP 300V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Power MOSFET(Vdss=-20V, Rds(on)=0.135ohm)

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ● U

Silicon Power Rectifier Diode, 6 Amp

Description and Features: The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: ● High Surge Current Capability ● High Voltage Available ● Designed for a

Video Switch, Bipolar IC

The TDA5850 is a switchable video amplifier with connections for the French and IEC VTR standards. Features ● Standard connection for VTR (CCIR) and Peri TV sets ● Input clamping ● Positve and negative video outputs