Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ● Ultra

Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)

Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ● Ultra

Ultra Low On-Resistance, P-Channel MOSFET

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HEXFET Power MOSFET

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BiMOS II LATCHED DRIVERS

DABiC-IV, 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER The A6818– devices combine a 32-bit CMOS shift register, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum fluorescent displays, the 60 V and -40 mA outpu

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

General Purpose Oscilloscope Probes

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Instrument Knobs

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WiFi /Active GNSS Direct Mount Antenna

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