型号 功能描述 生产厂家 企业 LOGO 操作
IRF4S3

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Power Rectifiers

Edal Series F power rectifiers are stud mounted DO-5 packages. Because the silicon junction is carefully fitted within a glass-to-metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions. The series F power rectifiers

EDAL

Material specification

文件:52.68 Kbytes Page:4 Pages

FERROXCUBE

Silicon Power Rectifiers

文件:1.03081 Mbytes Page:2 Pages

EDAL

Highly Secure FM Keeloq

文件:1.69758 Mbytes Page:4 Pages

RFSOLUTIONS

更新时间:2025-10-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SSS
24+
NA/
2900
优势代理渠道,原装正品,可全系列订货开增值税票
MOT/KOREA
23+
NA
6500
全新原装假一赔十
23+
原厂封装
9888
专做原装正品,假一罚百!
IR
25+23+
TO-220
25621
绝对原装正品全新进口深圳现货
IR
24+
TO-220
6
IR
1030
全新原装 货期两周
SEC
17+
TO-220AB
6200
100%原装正品现货
IR
23+
TO-220
8000
原装正品,假一罚十
IR
23+
TO-220
8000
只做原装现货
IR
23+
TO-220
7000

IRF4S3数据表相关新闻