N-Channel Power MOSFETs, 15A, 350V/400V

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

15A, 400V, 0.300 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

isc N-Channel MOSFET Transistor

文件：49.05 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFETS

文件：91.64 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET

文件：43.18 Kbytes Page：2 Pages

场效应管(MOSFET)

15A, 400V, 0.300 Ohm, N-Channel Power MOSFET

MOSFETs and JFETs

N-Channel Power MOSFETs, 15A, 350V/400V

HEADER STRIPS .100??Grid Solder Tail Single Row

文件：116.48 Kbytes Page：1 Pages

Low Inductance, Radial, Aluminum Electrolytic High Frequency, Solid Aluminum Top

文件：182.95 Kbytes Page：4 Pages

9x14mm Differential PECL High Frequency VCXO(416MHz to 832MHz)

文件：105.86 Kbytes Page：2 Pages

Celeron M Processor on 90 nm Process

文件：879.41 Kbytes Page：68 Pages

Celeron D Processor

文件：1.75778 Mbytes Page：82 Pages