N-Channel Power MOSFETs, 15A, 350V/400V

15A, 400V, 0.300 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

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N-CHANNEL POWER MOSFETS

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场效应管(MOSFET)

15A, 400V, 0.300 Ohm, N-Channel Power MOSFET

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N-Channel Power MOSFETs, 15A, 350V/400V

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