COMPLEMETARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in

PNP EPITAXIAL SILICON POWER TRANSISTOR

Designed for use in Line-Operated Applications sush as Low Power, Line- Operate Pass and Switching Regulators

0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS

Plastic Medium Power NPN Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc • Ex

COMPLEMETARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complementary PNP type is MJE350. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ LI

Plastic Medium Power PNP Silicon Transistor

Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 300 Vdc @ IC = 1.0 mAd

High Voltage General Purpose Applications

High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE340

Silicon PNP transistor in a TO-126F Plastic Package.

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features High Collector-Emitter Breakdown Voltage, Complement to MJE340. Applications High voltage general purpose applications.

COMPLEMENTARY SILICON PLASTIC POWER TRANSITORS

DESCRIPTION The CENTRAL SEMICONDUCTOR MJE340, MJE350 type are Complementary Silicon Power Transistors designed for power output stages in consumer product applications.

PNP EPITAXIAL SILICON POWER TRANSISTOR

PNP EPITAXIAL SILICON POWER TRANSISTOR Designed for use in Line-Operated Applications sush as Low Power, Line- Operated Series Pass and Switching Regulators

isc Silicon PNP Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) • DC Current Gain- : hFE = -100(Min) @ IC= -50mA • Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA • Complement to the NPN MJE340 APPLICATIONS • Designed for high voltage and gener

Plastic Medium Power PNP Silicon Transistor

Plastic Medium Power PNP Silicon Transistor This device is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features • High Collector-Emitter Sustaining Voltage - VCEO(sus)=300Vdc@IC

Medium Power PNP Transistor

Feature: •PNP Plastic Medium Power Silicon Transistor •Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability

Medium Power PNP Transistors

Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability.

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 300V 0.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

音频功放晶体管

双极晶体管

0.5 A, 300 V PNP Bipolar Power Transistor

Medium Power PNP Transistors

Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability.

Plastic Medium-Power PNP Silicon Transistor

Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 300 Vdc @ IC = 1.0 mAd

Plastic Medium Power PNP Silicon Transistor

Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 300 Vdc @ IC = 1.0 mAd

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 300V 0.5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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