50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

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SMPS MOSFET

Applications High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current

HEXFET Power MOSFET

Applications High frequency DC-DC converters Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

StrongIRFET™

Applications  UPS and Inverter applications  Half-bridge and full-bridge topologies  Resonant mode power supplies  DC/DC and AC/DC converters  OR-ing and redundant power switches  Brushed and BLDC Motor drive applications  Battery powered circuits Benefits  Improved Gate, Avalan

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

N-Channel MOSFET Transistor

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Isc N-Channel MOSFET Transistor

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HEXFET Power MOSFET

Ultra Low On-Resistance

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HEXFET짰 Power MOSFET

文件：215.71 Kbytes Page：10 Pages

Ultra Low On-Resistance

文件：267.97 Kbytes Page：9 Pages

Isc N-Channel MOSFET Transistor

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N 沟道功率 MOSFET

Ultra Low On-Resistance

文件：328.76 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：328.76 Kbytes Page：11 Pages

IR MOSFET - StrongIRFET?

文件：1.05295 Mbytes Page：17 Pages

ECHOTEL짰NON-CONTACTULTRASOUND

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Long-Life, Switching Power Grade Radial

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Celeron D Processor

文件：2.07013 Mbytes Page：95 Pages

ROCKER AND PADDLE SWITCHES - MINIATURE

文件：1.20373 Mbytes Page：9 Pages

SCREW TYPE SERIES

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