AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

N-Channel MOSFET Transistor

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75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

Isc N-Channel MOSFET Transistor

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HEXFET Power MOSFET

Ultra Low On-Resistance

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HEXFET짰 Power MOSFET

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Ultra Low On-Resistance

文件：267.97 Kbytes Page：9 Pages

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

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N 沟道功率 MOSFET

Ultra Low On-Resistance

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Ultra Low On-Resistance

文件：328.76 Kbytes Page：11 Pages

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 3000 V Mean forward current 2300 A Surge current 30.2 kA

30A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Ultra-Fast Switching ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

Microcomputers/Controllers

General Description The MN3007 is a 1024-stage long delay low noise BBD that provides a signal delay of up to 51.0msec. The MN3007 is particularly suitable for use as reverberation effect of electronic musical instrument such as stereo equipment due to its long delay times.

Discrete LED Indicators

Features: • All Plastic Mold Type: NTE3007 (Diffused Red, Gallium Arsenide Phosphide Red) NTE3008 (Diffused Bright Red, Gallium Phosphide on Gallium Phosphide Red) NTE3009 (Diffused Orange, Gallium Arsenide Phosphide on Gallium Phosphide Orange) NTE3010 (Diffused Green,

5 BIT PROGRAMMABLE SYNCHRONOUS BUCK PLUS NON SYNCHRONOUS , LDO CONTROLLER AND 200MmA LDO ON BOARD

DESCRIPTION The US3007 controller IC is specifically designed to meet Intel specification for Pentium IIä microprocessor applications as well as the next generation of P6 family processors. FEATURES ■ Provides Single Chip Solution for Vcore, GTL+ ,Clock Supply & 3.3V Switcher on b