位置：首页 > IC中文资料第11315页 > IRF2N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF2N60 | POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff | SUNTAC Suntac Electronic Corp. |  |   |
IRF2N60 | POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff | SUNTAC Suntac Electronic Corp. | | |
IRF2N60 | 2A 600V N CHANNEL POWER MOSFET 文件：101.47 Kbytes Page：3 Pages | FCIFirst Components International 戈采戈采企业股份有限公司 |  | |
POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff | SUNTAC Suntac Electronic Corp. | | | |
POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff | SUNTAC Suntac Electronic Corp. | | | |
POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff | SUNTAC Suntac Electronic Corp. | | | |
POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff | SUNTAC Suntac Electronic Corp. | | | |
POWER MOSFET GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff | SUNTAC Suntac Electronic Corp. | | | |
2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
N2 Amps竊?00Volts N-Channel MOSFET Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. Features ● RDS(ON) = 5.00Ω@VGS = 10 V ● Low gate charge | ESTEKEstek Electronics Co. Ltd 伊泰克电子北京伊泰克电子有限公司 |  | | |
2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
600V N-Channel Power MOSFET Features ● RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 |  | | |
2A 600V N-channel Enhancement Mode Power MOSFET 文件：1.34834 Mbytes Page：13 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 |  | |
IRF2N60产品属性
- 类型
描述
- 型号
IRF2N60
- 制造商
SUNTAC
- 制造商全称
SUNTAC
- 功能描述
POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUNTAC |
24+ |
NA/ |
20 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Suntac |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
Suntac |
07+ |
TO-220F |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOT |
2016+ |
TO-251 |
6528 |
房间原装进口现货假一赔十 |
|||
IR |
2023+ |
TO220 |
5800 |
进口原装,现货热卖 |
|||
IR |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Suntac |
18+ |
TO-220F |
85600 |
保证进口原装可开17%增值税发票 |
|||
IR |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
21+ |
TO-220 |
12588 |
原装正品,自己库存 假一罚十 |
||||
原装Iitrrs |
SMD |
15620 |
一级代理 原装正品假一罚十价格优势长期供货 |
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