丝印代码：2N60；2A 600V N-channel Enhancement Mode Power MOSFET

文件：1.34834 Mbytes Page：13 Pages

丝印代码：2N60；2A 600V N-channel Enhancement Mode Power MOSFET

文件：1.3597 Mbytes Page：13 Pages

丝印代码：2N60；2A 600V N-channel Enhancement Mode Power MOSFET

文件：1.34734 Mbytes Page：13 Pages

丝印代码：2N60；2A 600V N-channel Enhancement Mode Power MOSFET

文件：1.40358 Mbytes Page：13 Pages

丝印代码：2N60；2A 600V N-channel Enhancement Mode Power MOSFET

文件：1.3527 Mbytes Page：13 Pages

丝印代码：2N60；2A 600V N-channel Enhancement Mode Power MOSFET

文件：1.34768 Mbytes Page：13 Pages

丝印代码：2N60；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

丝印代码：2N60；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

丝印代码：2N60；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

丝印代码：2N60；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

N-CHANNEL POWER MOSFET

Features ● RDS(ON)

2A mps,600 Volts N-CHANNEL MOSFET

FEATURE ● 2A,600V,RDS(ON)=4Ω @VGS=10V/1A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

N2 Amps竊?00Volts N-Channel MOSFET

Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. Features ● RDS(ON) = 5.00Ω@VGS = 10 V ● Low gate charge

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switchi

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

N-CHANNEL MOSFET

DESCRIPTION 2N60 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su

600V N-Channel Power MOSFET

Features ● RDS(ON)

TO-251 Plastic-Encapsulate MOSFET

N -Channel MOSFET Features ● Robust High Voltage Termination ● Avalanche Energy Specified ● Diode is Characterized for Use in Bridge Circuits ● IDSS and VDS(on) Specified at Elevated Temperature

Fast Switching

• FEATURES • Drain current: ID= 2A@ TC=25℃ • Drain source voltage: VDSS= 600V(Min) • Static drain-source on-resistance: RDS(on) = 5.0Ω (Max) • Fast switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switch

N-Channel MOSFET

Features ● RDS(ON) = 3.8 Ω @VGS = 10V. ● Low gate charge ( typical 9.0 nC). ● Low Crss ( typical 5.0 pF). ● Fast switching capability. ● Avalanche energy specified ● Improved dv/dt capability.

isc N-Channel MOSFET Transistor

文件：316.23 Kbytes Page：2 Pages

N-channel power MOS tube

文件：2.6376 Mbytes Page：9 Pages

MOSFET

650V N-Channel MOSFET

MOSFET(场效应管）

N-CHANNEL MOSFET

文件：389.73 Kbytes Page：7 Pages

2A, 600V N-CHANNEL POWER MOSFET

文件：245.73 Kbytes Page：6 Pages

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

PROGRAMMABLE UNIJUNCTION TRANSISTOR

DESCRIPTION The UTC 2N6027 is a programmable unijunction transistor, it uses UTC’s advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low offset voltage and high peak output voltage, etc. The UTC 2N6027 is suitable for timing, thyristor-trigger,

MU4893

MU4893

PROGRAMMABLE UNIJUNCTION TRANSISTOR

[GESS] Programmable Unijunction Transistor

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

PROGRAMMABLE UNIJUNCTION TRANSISTORS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS

SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 40 VOLTS 375 mW

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

PROGRAMMABLE UNIJUNCTION TRANSISTOR

DESCRIPTION The UTC 2N6027 is a programmable unijunction transistor, it uses UTC’s advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low offset voltage and high peak output voltage, etc. The UTC 2N6027 is suitable for timing, thyristor-trigger,

PROGRAMMABLE UNIJUNCTION TRANSISTOR

DESCRIPTION The UTC 2N6027 is a programmable unijunction transistor, it uses UTC’s advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low offset voltage and high peak output voltage, etc. The UTC 2N6027 is suitable for timing, thyristor-trigger,

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

MU4893

MU4893

PROGRAMMABLE UNIJUNCTION TRANSISTOR

[GESS] Programmable Unijunction Transistor

SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS

SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 40 VOLTS 375 mW

PROGRAMMABLE UNIJUNCTION TRANSISTORS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Programmable Unijunction Transistor

Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circ

Power Transistors

Power Transistors

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications.

POWER TRANSISTORS COMPLEMENTARY SILICON

HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS