2N60晶体管资料

  • 2N60别名:2N60三极管、2N60晶体管、2N60晶体三极管

  • 2N60生产厂家:CSR_美国电子晶体管公司_IDI

  • 2N60制作材料:Ge-PNP

  • 2N60性质:低频或音频放大 (LF)

  • 2N60封装形式:直插封装

  • 2N60极限工作电压:25V

  • 2N60最大电流允许值:0.2A

  • 2N60最大工作频率:<1MHZ或未知

  • 2N60引脚数:3

  • 2N60最大耗散功率

  • 2N60放大倍数:β=65

  • 2N60图片代号:D-9

  • 2N60vtest:25

  • 2N60htest:999900

  • 2N60atest:0.2

  • 2N60wtest:0

  • 2N60代换 2N60用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX53A,

2N60价格

参考价格:¥0.0000

型号:2N600 品牌:General 备注:这里有2N60多少钱,2025年最近7天走势,今日出价,今日竞价,2N60批发/采购报价,2N60行情走势销售排行榜,2N60报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N60

TO-251Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●DiodeisCharacterizedforUseinBridgeCircuits ●IDSSandVDS(on)SpecifiedatElevatedTemperature

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
2N60

N-CHANNELMOSFET

DESCRIPTION 2N602N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
2N60

N-ChannelPowerMOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell2N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof2A,fastswitchi

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI
2N60

FastSwitching

•FEATURES •Draincurrent:ID=2A@TC=25℃ •Drainsourcevoltage:VDSS=600V(Min) •Staticdrain-sourceon-resistance:RDS(on)=5.0Ω(Max) •Fastswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz •APPLICATIONS •Switch

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N60

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
2N60

N-ChannelMOSFET

Features ●RDS(ON)=3.8Ω@VGS=10V. ●Lowgatecharge(typical9.0nC). ●LowCrss(typical5.0pF). ●Fastswitchingcapability. ●Avalancheenergyspecified ●Improveddv/dtcapability.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2N60

2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N60

N2Amps竊?00VoltsN-ChannelMOSFET

Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge

ESTEKEstek Electronics Co. Ltd

伊泰克电子北京伊泰克电子有限公司

ESTEK
2N60

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N60

600VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC
2N60

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
2N60

2Amps,600VoltsN-CHANNELMOSFET

FEATURE ●2A,600V,RDS(ON)=4Ω@VGS=10V/1A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.34834 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.3597 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.34734 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.40358 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.3527 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.34768 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
2N60

2A,600VN-CHANNELPOWERMOSFET

文件:245.73 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N60

iscN-ChannelMOSFETTransistor

文件:316.23 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N60

N-CHANNELMOSFET

文件:389.73 Kbytes Page:7 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
2N60

N-channelpowerMOStube

文件:2.6376 Mbytes Page:9 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

PROGRAMMABLEUNIJUNCTIONTRANSISTOR

[GESS] ProgrammableUnijunctionTransistor

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

MU4893

MU4893

CentralCentral Semiconductor Corp

美国中央半导体

Central

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PROGRAMMABLEUNIJUNCTIONTRANSISTOR

DESCRIPTION TheUTC2N6027isaprogrammableunijunctiontransistor,itusesUTC’sadvancedtechnologytoprovidecustomerswithlowforwardvoltage,lowgatetoanodeleakagecurrent,lowoffsetvoltageandhighpeakoutputvoltage,etc. TheUTC2N6027issuitablefortiming,thyristor-trigger,

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SILICONPROGRAMMABLEUNIJUNCTIONTRANSISTORS

SILICONPROGRAMMABLEUNIJUNCTIONTRANSISTORS40VOLTS375mW

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PROGRAMMABLEUNIJUNCTIONTRANSISTORS

AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

DIGITRON

Digitron Semiconductors

DIGITRON

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PROGRAMMABLEUNIJUNCTIONTRANSISTOR

DESCRIPTION TheUTC2N6027isaprogrammableunijunctiontransistor,itusesUTC’sadvancedtechnologytoprovidecustomerswithlowforwardvoltage,lowgatetoanodeleakagecurrent,lowoffsetvoltageandhighpeakoutputvoltage,etc. TheUTC2N6027issuitablefortiming,thyristor-trigger,

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

PROGRAMMABLEUNIJUNCTIONTRANSISTOR

DESCRIPTION TheUTC2N6027isaprogrammableunijunctiontransistor,itusesUTC’sadvancedtechnologytoprovidecustomerswithlowforwardvoltage,lowgatetoanodeleakagecurrent,lowoffsetvoltageandhighpeakoutputvoltage,etc. TheUTC2N6027issuitablefortiming,thyristor-trigger,

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MU4893

MU4893

CentralCentral Semiconductor Corp

美国中央半导体

Central

PROGRAMMABLEUNIJUNCTIONTRANSISTOR

[GESS] ProgrammableUnijunctionTransistor

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

PROGRAMMABLEUNIJUNCTIONTRANSISTORS

AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

DIGITRON

Digitron Semiconductors

DIGITRON

SILICONPROGRAMMABLEUNIJUNCTIONTRANSISTORS

SILICONPROGRAMMABLEUNIJUNCTIONTRANSISTORS40VOLTS375mW

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N5629,2N6029seriesdevicesarecomplementarysiliconpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforhighvoltageandhighpoweramplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N56292N5630 •Highpowerdissipations APPLICATIONS •Forhighvoltageandhighpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N56292N5630 APPLICATIONS •Forhighvoltageandhighpoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

PowerTransistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

POWERTRANSISTORSSPNPSILICON

HIGH-VOLTAGE-HIGHPOWERTRANSISTORS 16AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON 100-120-140VOLTS200WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N56292N5630 •Highpowerdissipations APPLICATIONS •Forhighvoltageandhighpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

POWERTRANSISTORSCOMPLEMENTARYSILICON

HIGH-VOLTAGE-HIGHPOWERTRANSISTORS 16AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON 100-120-140VOLTS200WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

POWERTRANSISTORSCOMPLEMENTARYSILICON

HIGH-VOLTAGE-HIGHPOWERTRANSISTORS 16AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON 100-120-140VOLTS200WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

POWERTRANSISTORSSPNPSILICON

HIGH-VOLTAGE-HIGHPOWERTRANSISTORS 16AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON 100-120-140VOLTS200WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PowerTransistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

2N60产品属性

  • 类型

    描述

  • 型号

    2N60

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    MOS

更新时间:2025-6-18 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ON Semiconductor
23+
SMD
370
全新原装假一赔十
UTC
24+
TO252
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
INFINE0N
2023+
TO-252
50000
原装现货
Central Semiconductor Corp
24+
TO-204AA,TO-3
30000
晶体管-分立半导体产品-原装正品
UTC
三年内
TO-92
1983
只做原装正品
22+
TO126
100000
代理渠道/只做原装/可含税
蓝箭
25+
TO252
54648
百分百原装现货 实单必成 欢迎询价
ON
24+
TO-220-3
25000
ON全系列可订货

2N60芯片相关品牌

  • ATS2
  • BETLUX
  • delta
  • Diotec
  • ETAL
  • LUMBERG
  • Molex
  • MOLEX11
  • ONSEMI
  • WAGO
  • WEIDMULLER
  • YFWDIODE

2N60数据表相关新闻