2N60晶体管资料

  • 2N60别名:2N60三极管、2N60晶体管、2N60晶体三极管

  • 2N60生产厂家:CSR_美国电子晶体管公司_IDI

  • 2N60制作材料:Ge-PNP

  • 2N60性质:低频或音频放大 (LF)

  • 2N60封装形式:直插封装

  • 2N60极限工作电压:25V

  • 2N60最大电流允许值:0.2A

  • 2N60最大工作频率:<1MHZ或未知

  • 2N60引脚数:3

  • 2N60最大耗散功率

  • 2N60放大倍数:β=65

  • 2N60图片代号:D-9

  • 2N60vtest:25

  • 2N60htest:999900

  • 2N60atest:.2

  • 2N60wtest:0

  • 2N60代换 2N60用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX53A,

2N60价格

参考价格:¥0.0000

型号:2N600 品牌:General 备注:这里有2N60多少钱,2024年最近7天走势,今日出价,今日竞价,2N60批发/采购报价,2N60行情走势销售排行榜,2N60报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N60

2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N60

N2Amps竊?00VoltsN-ChannelMOSFET

Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

ESTEK
2N60

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N60

600VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC
2N60

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
2N60

2Amps,600VoltsN-CHANNELMOSFET

FEATURE ●2A,600V,RDS(ON)=4Ω@VGS=10V/1A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING
2N60

TO-251Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●DiodeisCharacterizedforUseinBridgeCircuits ●IDSSandVDS(on)SpecifiedatElevatedTemperature

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
2N60

N-CHANNELMOSFET

DESCRIPTION 2N602N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
2N60

N-ChannelPowerMOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell2N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof2A,fastswitchi

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI
2N60

FastSwitching

•FEATURES •Draincurrent:ID=2A@TC=25℃ •Drainsourcevoltage:VDSS=600V(Min) •Staticdrain-sourceon-resistance:RDS(on)=5.0Ω(Max) •Fastswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz •APPLICATIONS •Switch

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N60

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
2N60

N-ChannelMOSFET

Features ●RDS(ON)=3.8Ω@VGS=10V. ●Lowgatecharge(typical9.0nC). ●LowCrss(typical5.0pF). ●Fastswitchingcapability. ●Avalancheenergyspecified ●Improveddv/dtcapability.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2N60

iscN-ChannelMOSFETTransistor

文件:316.23 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N60

N-CHANNELMOSFET

文件:389.73 Kbytes Page:7 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.34834 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.3597 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.34734 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.40358 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.3527 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH
2N60

2A600VN-channelEnhancementModePowerMOSFET

文件:1.34768 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH
2N60

2A,600VN-CHANNELPOWERMOSFET

文件:245.73 Kbytes Page:6 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MU4893

MU4893

CentralCentral Semiconductor Corp

美国中央半导体

Central

PROGRAMMABLEUNIJUNCTIONTRANSISTOR

[GESS] ProgrammableUnijunctionTransistor

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

PROGRAMMABLEUNIJUNCTIONTRANSISTOR

DESCRIPTION TheUTC2N6027isaprogrammableunijunctiontransistor,itusesUTC’sadvancedtechnologytoprovidecustomerswithlowforwardvoltage,lowgatetoanodeleakagecurrent,lowoffsetvoltageandhighpeakoutputvoltage,etc. TheUTC2N6027issuitablefortiming,thyristor-trigger,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

SILICONPROGRAMMABLEUNIJUNCTIONTRANSISTORS

SILICONPROGRAMMABLEUNIJUNCTIONTRANSISTORS40VOLTS375mW

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PROGRAMMABLEUNIJUNCTIONTRANSISTORS

AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

DIGITRON

Digitron Semiconductors

DIGITRON

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PROGRAMMABLEUNIJUNCTIONTRANSISTOR

DESCRIPTION TheUTC2N6027isaprogrammableunijunctiontransistor,itusesUTC’sadvancedtechnologytoprovidecustomerswithlowforwardvoltage,lowgatetoanodeleakagecurrent,lowoffsetvoltageandhighpeakoutputvoltage,etc. TheUTC2N6027issuitablefortiming,thyristor-trigger,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

PROGRAMMABLEUNIJUNCTIONTRANSISTOR

DESCRIPTION TheUTC2N6027isaprogrammableunijunctiontransistor,itusesUTC’sadvancedtechnologytoprovidecustomerswithlowforwardvoltage,lowgatetoanodeleakagecurrent,lowoffsetvoltageandhighpeakoutputvoltage,etc. TheUTC2N6027issuitablefortiming,thyristor-trigger,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MU4893

MU4893

CentralCentral Semiconductor Corp

美国中央半导体

Central

PROGRAMMABLEUNIJUNCTIONTRANSISTOR

[GESS] ProgrammableUnijunctionTransistor

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

PROGRAMMABLEUNIJUNCTIONTRANSISTORS

AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

DIGITRON

Digitron Semiconductors

DIGITRON

SILICONPROGRAMMABLEUNIJUNCTIONTRANSISTORS

SILICONPROGRAMMABLEUNIJUNCTIONTRANSISTORS40VOLTS375mW

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ProgrammableUnijunctionTransistor

ProgrammableUnijunctionTransistor ProgrammableUnijunctionTransistorTriggers Designedtoenabletheengineerto“program’’unijunctioncharacteristicssuchasRBB,η,IV,andIPbymerelyselectingtworesistorvalues.Applicationincludesthyristor−trigger,oscillator,pulseandtimingcirc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N5629,2N6029seriesdevicesarecomplementarysiliconpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforhighvoltageandhighpoweramplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

PowerTransistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N56292N5630 •Highpowerdissipations APPLICATIONS •Forhighvoltageandhighpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N56292N5630 APPLICATIONS •Forhighvoltageandhighpoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

POWERTRANSISTORSSPNPSILICON

HIGH-VOLTAGE-HIGHPOWERTRANSISTORS 16AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON 100-120-140VOLTS200WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N56292N5630 •Highpowerdissipations APPLICATIONS •Forhighvoltageandhighpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

POWERTRANSISTORSCOMPLEMENTARYSILICON

HIGH-VOLTAGE-HIGHPOWERTRANSISTORS 16AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON 100-120-140VOLTS200WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

POWERTRANSISTORSCOMPLEMENTARYSILICON

HIGH-VOLTAGE-HIGHPOWERTRANSISTORS 16AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON 100-120-140VOLTS200WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N56292N5630 •Highpowerdissipations APPLICATIONS •Forhighvoltageandhighpoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N56292N5630 APPLICATIONS •Forhighvoltageandhighpoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Complementtotype2N56292N5630 •Highpowerdissipations APPLICATIONS •Forhighvoltageandhighpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

2N60产品属性

  • 类型

    描述

  • 型号

    2N60

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    MOS

更新时间:2024-5-1 16:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA
2022
34
原厂原装正品,价格超越代理
CENTRAL-中环
24+25+/26+27+
车规-元器件
43788
一一有问必回一特殊渠道一有长期订货一备货HK仓库
NA
19+
59060
原厂代理渠道,每一颗芯片都可追溯原厂;
UTC
1845+
TO251
5790
只做原装!量大可以订货!特价支持实单!
DG
2023+
TO-252
8635
全新原装正品,优势价格
RCA
10
全新原装 货期两周
ON/安森美
24+
TO92
990000
明嘉莱只做原装正品现货
ON
19+
TO225AA
12238
UTC/友顺
22+
TO-252
60620
800
ON
17+
TO-220
6200

2N60芯片相关品牌

  • ARIES
  • Bourns
  • FERROXCUBE
  • Fuji
  • KOA
  • MEANWELL
  • PREDIP
  • RFE
  • SMC
  • TRUMPOWER
  • WPI
  • YANGJIE

2N60数据表相关新闻