IRF2907Z价格
参考价格:¥12.3700
型号:IRF2907ZLPBF 品牌:IR 备注:这里有IRF2907Z多少钱,2026年最近7天走势,今日出价,今日竞价,IRF2907Z批发/采购报价,IRF2907Z行情走势销售排行榜,IRF2907Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF2907Z | AUTOMOTIVE MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op | IRF | ||
IRF2907Z | 采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET \n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ; | INFINEON 英飞凌 | ||
IRF2907Z | N-Channel MOSFET Transistor 文件:339.09 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRF2907Z | AUTOMOTIVE MOSFET 文件:364 Kbytes Page:12 Pages | IRF | ||
AUTOMOTIVE MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op | IRF | |||
HEXFET Power MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF | |||
HEXFET Power MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF | |||
AUTOMOTIVE MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op | IRF | |||
75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度\n ; | INFINEON 英飞凌 | |||
采用 7 引脚 D2-Pak 封装的 75V 单 N 通道 HEXFET 功率 MOSFET \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度; | INFINEON 英飞凌 | |||
HEXFET Power MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF | |||
AUTOMOTIVE MOSFET 文件:364 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:426.18 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:426.18 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:426.18 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:426.18 Kbytes Page:12 Pages | IRF | |||
丝印代码:D2PAK;Isc N-Channel MOSFET Transistor 文件:244.43 Kbytes Page:2 Pages | ISC 无锡固电 | |||
AUTOMOTIVE MOSFET 文件:364 Kbytes Page:12 Pages | IRF | |||
HEXFET짰 Power MOSFET 文件:664.16 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:300.68 Kbytes Page:10 Pages | IRF | |||
HEXFET짰 Power MOSFET 文件:673.47 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:300.68 Kbytes Page:10 Pages | IRF | |||
HEXFET짰 Power MOSFET 文件:673.47 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:300.68 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:426.18 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:300.68 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:426.18 Kbytes Page:12 Pages | IRF | |||
General Purpose Transistors General Purpose Transistors PNP Silicon | MOTOROLA 摩托罗拉 | |||
General Purpose Transistors General Purpose Transistors PNP Silicon | MOTOROLA 摩托罗拉 | |||
THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 |
IRF2907Z产品属性
- 类型
描述
- OPN:
IRF2907ZPBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
75 V
- RDS (on) @10V max:
4.5 mΩ
- ID @25°C max:
170 A
- QG typ @10V:
180 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET™
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INR |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
|||
IR |
23+ |
65480 |
|||||
IR |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飞凌全新特价IRF2907ZPBF即刻询购立享优惠#长期有货 |
|||
IR |
2025+ |
TO-220 |
5000 |
原装进口价格优 请找坤融电子! |
|||
Infineon(英飞凌) |
25+ |
D2PAK |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
INFINEON/英飞凌 |
25+ |
TO220 |
20000 |
原装 |
|||
IR |
23+ |
8000 |
263 |
专注配单,只做原装进口现货 |
|||
IR |
23+ |
263 |
7000 |
||||
IR |
24+ |
SOT-223 |
59 |
IRF2907Z规格书下载地址
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DdatasheetPDF页码索引
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