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IRF2907Z价格

参考价格:¥12.3700

型号:IRF2907ZLPBF 品牌:IR 备注:这里有IRF2907Z多少钱,2026年最近7天走势,今日出价,今日竞价,IRF2907Z批发/采购报价,IRF2907Z行情走势销售排行榜,IRF2907Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF2907Z

AUTOMOTIVE MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op

IRF

IRF2907Z

采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

INFINEON

英飞凌

IRF2907Z

N-Channel MOSFET Transistor

文件:339.09 Kbytes Page:2 Pages

ISC

无锡固电

IRF2907Z

AUTOMOTIVE MOSFET

文件:364 Kbytes Page:12 Pages

IRF

AUTOMOTIVE MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op

IRF

HEXFET Power MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

HEXFET Power MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

AUTOMOTIVE MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op

IRF

75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度\n ;

INFINEON

英飞凌

采用 7 引脚 D2-Pak 封装的 75V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

INFINEON

英飞凌

HEXFET Power MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

AUTOMOTIVE MOSFET

文件:364 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:426.18 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:426.18 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:426.18 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:426.18 Kbytes Page:12 Pages

IRF

丝印代码:D2PAK;Isc N-Channel MOSFET Transistor

文件:244.43 Kbytes Page:2 Pages

ISC

无锡固电

AUTOMOTIVE MOSFET

文件:364 Kbytes Page:12 Pages

IRF

HEXFET짰 Power MOSFET

文件:664.16 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

HEXFET짰 Power MOSFET

文件:673.47 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

HEXFET짰 Power MOSFET

文件:673.47 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:426.18 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:426.18 Kbytes Page:12 Pages

IRF

General Purpose Transistors

General Purpose Transistors PNP Silicon

MOTOROLA

摩托罗拉

General Purpose Transistors

General Purpose Transistors PNP Silicon

MOTOROLA

摩托罗拉

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

IRF2907Z产品属性

  • 类型

    描述

  • OPN:

    IRF2907ZPBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    75 V

  • RDS (on) @10V max:

    4.5 mΩ

  • ID @25°C max:

    170 A

  • QG typ @10V:

    180 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

更新时间:2026-8-1 15:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INR
23+
TO-3
5000
原装正品,假一罚十
IR
23+
65480
IR
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
INFINEON/英飞凌
25+
TO-220
32360
INFINEON/英飞凌全新特价IRF2907ZPBF即刻询购立享优惠#长期有货
IR
2025+
TO-220
5000
原装进口价格优 请找坤融电子!
Infineon(英飞凌)
25+
D2PAK
21000
原装正品现货,原厂订货,可支持含税原型号开票。
INFINEON/英飞凌
25+
TO220
20000
原装
IR
23+
8000
263
专注配单,只做原装进口现货
IR
23+
263
7000
IR
24+
SOT-223
59

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