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IRF2907Z价格
参考价格：￥12.3700
型号：IRF2907ZLPBF 品牌：IR 备注：这里有IRF2907Z多少钱，2025年最近7天走势，今日出价，今日竞价，IRF2907Z批发/采购报价，IRF2907Z行情走势销售排行榜，IRF2907Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF2907Z | AUTOMOTIVE MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op | IRF |   | |
IRF2907Z | AUTOMOTIVE MOSFET 文件：364 Kbytes Page：12 Pages | IRF | | |
IRF2907Z | N-Channel MOSFET Transistor 文件：339.09 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRF2907Z | 采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET | Infineon 英飞凌 | | |
AUTOMOTIVE MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op | IRF | | ||
HEXFET Power MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF | | ||
HEXFET Power MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op | IRF | | ||
HEXFET Power MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF | | ||
AUTOMOTIVE MOSFET 文件：364 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：426.18 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：426.18 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：426.18 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：426.18 Kbytes Page：12 Pages | IRF | | ||
75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 | Infineon 英飞凌 | | ||
Isc N-Channel MOSFET Transistor 文件：244.43 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
AUTOMOTIVE MOSFET 文件：364 Kbytes Page：12 Pages | IRF | | ||
采用 7 引脚 D2-Pak 封装的 75V 单 N 通道 HEXFET 功率 MOSFET | Infineon 英飞凌 | | ||
Advanced Process Technology 文件：300.68 Kbytes Page：10 Pages | IRF | | ||
HEXFET짰 Power MOSFET 文件：664.16 Kbytes Page：10 Pages | IRF | | ||
HEXFET짰 Power MOSFET 文件：673.47 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：300.68 Kbytes Page：10 Pages | IRF | | ||
HEXFET짰 Power MOSFET 文件：673.47 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：300.68 Kbytes Page：10 Pages | IRF | | ||
Advanced Process Technology 文件：426.18 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：300.68 Kbytes Page：10 Pages | IRF | | ||
Advanced Process Technology 文件：426.18 Kbytes Page：12 Pages | IRF | | ||
60 V PNP General-Purpose Transistor Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and | ONSEMI 安森美半导体 | | ||
PNP General-Purpose Transistor Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant. | ONSEMI 安森美半导体 | | ||
60 V PNP General-Purpose Transistor Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and | ONSEMI 安森美半导体 | | ||
500mA LOW DROPOUT VOLTAGE REGULATOR GENERAL DESCRIPTION The AMS2907 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower load c | ADMOS | | ||
808 MHz Center Frequency 文件：44.39 Kbytes Page：2 Pages | KR | |
IRF2907Z产品属性
- 类型
描述
- 型号
IRF2907Z
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
AUTOMOTIVE MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/INFINEON |
23+ |
TO-220 |
2000 |
只做原装假一罚十 |
|||
IR |
24+ |
D2-Pak |
8866 |
||||
IR |
1923+ |
TO-263 |
5000 |
正品原装品质假一赔十 |
|||
IR |
24+/25+ |
16 |
原装正品现货库存价优 |
||||
IR/INFINEON |
24+ |
SMD |
600 |
“芯达集团”专营军工百分之百原装进口 |
|||
INFINEON/英飞凌 |
17+ |
TO-220 |
370 |
原装现货 |
|||
IR(国际整流器) |
24+ |
N/A |
8169 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR |
21+ |
TO-220 |
1458 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
IRF2907Z规格书下载地址
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IRF2907Z数据表相关新闻
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IRF2907ZPBF MOSFET MOSFT
2019-4-11
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