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IRF2907ZS价格
参考价格:¥16.5177
型号:IRF2907ZS-7PPBF 品牌:INTERNATIONAL 备注:这里有IRF2907ZS多少钱,2025年最近7天走势,今日出价,今日竞价,IRF2907ZS批发/采购报价,IRF2907ZS行情走势销售排行榜,IRF2907ZS报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRF2907ZS | AUTOMOTIVE MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op | IRF | ||
IRF2907ZS | AUTOMOTIVE MOSFET 文件:364 Kbytes Page:12 Pages | IRF | ||
IRF2907ZS | Isc N-Channel MOSFET Transistor 文件:244.43 Kbytes Page:2 Pages | ISC 无锡固电 | ||
HEXFET Power MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF | |||
HEXFET짰 Power MOSFET 文件:673.47 Kbytes Page:11 Pages | IRF | |||
HEXFET짰 Power MOSFET 文件:664.16 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:300.68 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:300.68 Kbytes Page:10 Pages | IRF | |||
HEXFET짰 Power MOSFET 文件:673.47 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:300.68 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:426.18 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:300.68 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:426.18 Kbytes Page:12 Pages | IRF | |||
60 V PNP General-Purpose Transistor Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and | ONSEMI 安森美半导体 | |||
PNP General-Purpose Transistor Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant. | ONSEMI 安森美半导体 | |||
60 V PNP General-Purpose Transistor Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and | ONSEMI 安森美半导体 | |||
500mA LOW DROPOUT VOLTAGE REGULATOR GENERAL DESCRIPTION The AMS2907 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower load c | ADMOS | |||
808 MHz Center Frequency 文件:44.39 Kbytes Page:2 Pages | KR KR Electronics, Inc. |
IRF2907ZS产品属性
- 类型
描述
- 型号
IRF2907ZS
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
AUTOMOTIVE MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
D2-Pak |
8866 |
||||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
|||
IR |
25+ |
TO-263 |
12588 |
原装正品,价格优势 |
|||
INFINEON/英飞凌 |
2511 |
TO263-3 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
Infineon(英飞凌) |
24+ |
TO-263-3 |
10049 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
|||
IR |
21+ |
D2-Pak |
10000 |
原装现货假一罚十 |
|||
IR |
23+ |
TO-263 |
35890 |
||||
INFINE0N |
21+ |
D2PAK (TO-263) |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
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IRF2907ZPBF MOSFET MOSFT
2019-4-11
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