IRF2907ZS价格

参考价格:¥16.5177

型号:IRF2907ZS-7PPBF 品牌:INTERNATIONAL 备注:这里有IRF2907ZS多少钱,2026年最近7天走势,今日出价,今日竞价,IRF2907ZS批发/采购报价,IRF2907ZS行情走势销售排行榜,IRF2907ZS报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF2907ZS

AUTOMOTIVE MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op

IRF

IRF2907ZS

AUTOMOTIVE MOSFET

文件:364 Kbytes Page:12 Pages

IRF

IRF2907ZS

Isc N-Channel MOSFET Transistor

文件:244.43 Kbytes Page:2 Pages

ISC

无锡固电

IRF2907ZS

75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

HEXFET Power MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

采用 7 引脚 D2-Pak 封装的 75V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

HEXFET짰 Power MOSFET

文件:673.47 Kbytes Page:11 Pages

IRF

HEXFET짰 Power MOSFET

文件:664.16 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

HEXFET짰 Power MOSFET

文件:673.47 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:426.18 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:426.18 Kbytes Page:12 Pages

IRF

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

ONSEMI

安森美半导体

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

ONSEMI

安森美半导体

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

ONSEMI

安森美半导体

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The AMS2907 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower load c

ADMOS

808 MHz Center Frequency

文件:44.39 Kbytes Page:2 Pages

KR

IRF2907ZS产品属性

  • 类型

    描述

  • 型号

    IRF2907ZS

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    AUTOMOTIVE MOSFET

更新时间:2026-1-4 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
25+
D2PAK
21000
原装正品现货,原厂订货,可支持含税原型号开票。
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Infineon
原厂封装
9800
原装进口公司现货假一赔百
IR/INFINEON
24+
SMD
600
“芯达集团”专营军工百分之百原装进口
IR
NEW
TO-263
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
INFINEON/英飞凌
2022+
50
6600
只做原装,假一罚十,长期供货。
IRF2907ZSPBF
25+
19
19
25+
TO-263
18000
原厂直接发货进口原装
IR
2223+
TO-263
26800
只做原装正品假一赔十为客户做到零风险
Infineon(英飞凌)
25+
D2PAK
21000
原装正品现货,原厂订货,可支持含税原型号开票。

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