IRF2907ZS价格

参考价格:¥16.5177

型号:IRF2907ZS-7PPBF 品牌:INTERNATIONAL 备注:这里有IRF2907ZS多少钱,2025年最近7天走势,今日出价,今日竞价,IRF2907ZS批发/采购报价,IRF2907ZS行情走势销售排行榜,IRF2907ZS报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF2907ZS

AUTOMOTIVE MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op

IRF

IRF2907ZS

AUTOMOTIVE MOSFET

文件:364 Kbytes Page:12 Pages

IRF

IRF2907ZS

Isc N-Channel MOSFET Transistor

文件:244.43 Kbytes Page:2 Pages

ISC

无锡固电

IRF2907ZS

75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

HEXFET Power MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

采用 7 引脚 D2-Pak 封装的 75V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

HEXFET짰 Power MOSFET

文件:673.47 Kbytes Page:11 Pages

IRF

HEXFET짰 Power MOSFET

文件:664.16 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

HEXFET짰 Power MOSFET

文件:673.47 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:426.18 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:300.68 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:426.18 Kbytes Page:12 Pages

IRF

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

ONSEMI

安森美半导体

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

ONSEMI

安森美半导体

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

ONSEMI

安森美半导体

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The AMS2907 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower load c

ADMOS

808 MHz Center Frequency

文件:44.39 Kbytes Page:2 Pages

KR

IRF2907ZS产品属性

  • 类型

    描述

  • 型号

    IRF2907ZS

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    AUTOMOTIVE MOSFET

更新时间:2025-10-2 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
TO-263
8000
原装正品支持实单
IR
24+
D2-PAK
2500
只做原厂渠道 可追溯货源
IR
24+
D2-Pak
8866
Infineon(英飞凌)
24+
TO-263-3
10049
支持大陆交货,美金交易。原装现货库存。
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
23+
D2-Pak
6000
原装正品,支持实单
IR
2023+
D2-PAK
50000
原装现货
IR(国际整流器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
IR
23+
D2-PAK
7300
专注配单,只做原装进口现货
IR
23+
D2-Pak
7000

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