型号 功能描述 生产厂家 企业 LOGO 操作

AUTOMOTIVE MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

Advanced Process Technology

文件:298.26 Kbytes Page:11 Pages

IRF

HEXFET짰 Power MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

AUTOMOTIVE GRADE

文件:360.7 Kbytes Page:11 Pages

Infineon

英飞凌

AUTOMOTIVE GRADE

文件:360.7 Kbytes Page:11 Pages

Infineon

英飞凌

更新时间:2025-12-18 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
12800
优势代理渠道,原装正品,可全系列订货开增值税票
IR
24+
TO-263-
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
25+
TO-263
32360
IR全新特价IRF2804S-7PPBF即刻询购立享优惠#长期有货
IR
25+
TO-263-7
4500
全新原装、诚信经营、公司现货销售
IR
25+
TO-263-7
30000
代理全新原装现货,价格优势
IR
23+
NA
156
专做原装正品,假一罚百!
VISHAY
24+
TO-263
12000
VISHAY专营进口原装现货假一赔十
IR
25+23+
TO263
75109
绝对原装正品现货,全新深圳原装进口现货
IR
23+
TO263
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
INFINEON TECHNOLOGIES
24+
N/A
16374
原装原装原装

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