位置：首页 > IC中文资料第773页 > AUIRF2804S-7P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
AUIRF2804S-7P | HEXFET짰 Power MOSFET VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF |   | |
AUIRF2804S-7P | AUTOMOTIVE GRADE 文件：360.7 Kbytes Page：11 Pages | Infineon 英飞凌 | | |
AUTOMOTIVE GRADE 文件：360.7 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
AUTOMOTIVE MOSFET VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF | | ||
Advanced Process Technology 文件：298.26 Kbytes Page：11 Pages | IRF | |
AUIRF2804S-7P产品属性
- 类型
描述
- 型号
AUIRF2804S-7P
- 功能描述
MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
23+ |
原装 |
7000 |
||||
Infineon/英飞凌 |
23+ |
D2PAK-7 |
12700 |
买原装认准中赛美 |
|||
Infineon/英飞凌 |
2023+ |
D2PAK-7 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
Infineon/英飞凌 |
25 |
D2PAK-7 |
6000 |
原装正品 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINE0N |
21+ |
D2PAK7P |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
40 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon(英飞凌) |
24+ |
TO263-7 |
8048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR |
25+ |
TO-263-7 |
270 |
原装正品,欢迎来电咨询! |
|||
TI |
24+ |
SMD |
85450 |
ST一级专营品牌全新原装热卖 |
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DdatasheetPDF页码索引
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