位置:首页 > IC中文资料 > BD241C

BD241C晶体管资料

  • BD241C别名:BD241C三极管、BD241C晶体管、BD241C晶体三极管

  • BD241C生产厂家:美国无线电公司_美国得克萨斯仪表公司

  • BD241C制作材料:Si-NPN

  • BD241C性质:低频或音频放大 (LF)_功率放大 (L)

  • BD241C封装形式:直插封装

  • BD241C极限工作电压:100V

  • BD241C最大电流允许值:3A

  • BD241C最大工作频率:<1MHZ或未知

  • BD241C引脚数:3

  • BD241C最大耗散功率:40W

  • BD241C放大倍数

  • BD241C图片代号:B-10

  • BD241Cvtest:100

  • BD241Chtest:999900

  • BD241Catest:3

  • BD241Cwtest:40

  • BD241C代换 BD241C用什么型号代替:BD243C,BD581,BD591,TIP31C,3DD64D,

BD241C价格

参考价格:¥1.1279

型号:BD241C 品牌:SPC 备注:这里有BD241C多少钱,2026年最近7天走势,今日出价,今日竞价,BD241C批发/采购报价,BD241C行情走势销售排行榜,BD241C报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BD241C

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD242 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

BD241C

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively

FAIRCHILD

仙童半导体

BD241C

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively

FAIRCHILD

仙童半导体

BD241C

POWER TRANSISTORS COMPLEMENTARY SILICON

BD241C (NPN) BD242B (PNP) BD242C (PNP) Features • High Current Gain −Bandwidth Product • Compact TO−220 AB Package • Epoxy Meets UL94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

BD241C

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS

BOCA

博卡

BD241C

POWER TRANSISTORS(3A,40W)

MOSPEC

统懋

BD241C

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transisotors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

MOTOROLA

摩托罗拉

BD241C

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS

The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The PNP complements are BD242, A, B, C. Compliance to RoHS.

COMSET

BD241C

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type BD242/A/B/C APPLICATIONS • For medium power linear and switching applications

ISC

无锡固电

BD241C

COMPLEMENTARY SILICON PLASTIC

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD241C

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD241C

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD242 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

POINN

BD241C

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type BD242/A/B/C APPLICATIONS • For medium power linear and switching applications

SAVANTIC

BD241C

NPN SILICON POWER TRANSISTOR

● Designed for Complementary Use with the BD242 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

TRSYS

Transys Electronics

BD241C

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A,BD242B and BD242C respectively. ■ STMicroelectronics

STMICROELECTRONICS

意法半导体

BD241C

互补硅功率晶体管

The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD242A and BD242C. • NPN transistors;

STMICROELECTRONICS

意法半导体

BD241C

COMPLEMENTARY SILICON POWER TRANSISTORS

文件:53.54 Kbytes Page:4 Pages

STMICROELECTRONICS

意法半导体

BD241C

NPN power transistors

文件:258.69 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

BD241C

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN 100V 3A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

BD241C

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 100V 3A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

BD241C

Transistor

COMSET

BD241C

三极管

MOSPEC

统懋

BD241C

Silicon NPN Power Transistors

文件:92.17 Kbytes Page:3 Pages

SAVANTIC

BD241C

General Purpose Amplifiers

文件:1.50769 Mbytes Page:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BD241C

TO-220 - Power Transistors and Darlingtons

文件:76.15 Kbytes Page:3 Pages

RECTRON

丽正

BD241C

Complementary Silicon Plastic Power Transistors

文件:99.53 Kbytes Page:6 Pages

ONSEMI

安森美半导体

BD241C

Complementary Silicon Plastic Power Transistors

文件:108.13 Kbytes Page:6 Pages

ONSEMI

安森美半导体

BD241C

Complementary Silicon Plastic Power Transistors 80??00 VOLTS

文件:155.65 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively

FAIRCHILD

仙童半导体

Complementary Silicon Plastic Power Transistors

文件:99.53 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors 80??00 VOLTS

文件:155.65 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

文件:108.13 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors 80??00 VOLTS

文件:155.65 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

文件:108.13 Kbytes Page:6 Pages

ONSEMI

安森美半导体

POWER TRANSISTORS(3A,40W)

MOSPEC

统懋

POWER TRANSISTORS(3A,40W)

MOSPEC

统懋

POWER TRANSISTORS(3A,40W)

MOSPEC

统懋

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transisotors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

MOTOROLA

摩托罗拉

BD241C产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Polarity:

    NPN

  • Type:

    General Purpose

  • VCE(sat) Max (V):

    1.2

  • IC Cont. (A):

    3

  • VCEO Min (V):

    100

  • VCBO (V):

    115

  • VEBO (V):

    5

  • VBE(on) (V):

    1.8

  • hFE Min:

    2.5

  • fT Min (MHz):

    3

  • PTM Max (W):

    40

  • Package Type:

    TO-220-3

更新时间:2026-7-23 10:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
25+
TO-220
6000
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST
2026+
TO220
12500
全新原装正品,本司专业配单,大单小单都配
ST/意法半导体
2021+
TO-220-3
7600
原装现货,欢迎询价
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
FSC
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
ON
19+
TO-220
8991
PHI
24+
1140
ST
2025+
TO-220
3577
全新原厂原装产品、公司现货销售
TOSHIBA
22+
TO-263
8000
原装正品支持实单

BD241C数据表相关新闻