NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD242 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A,BD242B and BD242C respectively. ■ STMicroelectronics

NPN SILICON POWER TRANSISTOR

● Designed for Complementary Use with the BD242 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS

NPN SILCON EPITAXIAL BASE POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD242 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

POWER TRANSISTORS(3A,40W)

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type BD242/A/B/C APPLICATIONS • For medium power linear and switching applications

NPN power transistor

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ This device is qualified for automotive application ■ NPN transistor Applications ■ A

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type BD242/A/B/C APPLICATIONS • For medium power linear and switching applications

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS

The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The PNP complements are BD242, A, B, C. Compliance to RoHS.

COMPLEMENTARY SILICON PLASTIC

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN 60V 3A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：92.17 Kbytes Page：3 Pages

NPN power transistors

文件：258.69 Kbytes Page：9 Pages

三极管

TO-220 - Power Transistors and Darlingtons

文件：76.15 Kbytes Page：3 Pages

COMPLEMENTARY SILICON POWER TRANSISTORS

文件：53.54 Kbytes Page：4 Pages

NPN power transistor

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ This device is qualified for automotive application ■ NPN transistor Applications ■ A

COMPLEMENTARY SILICON POWER TRANSISTORS

文件：53.54 Kbytes Page：4 Pages

NPN power transistors

文件：258.69 Kbytes Page：9 Pages

封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 60V 3A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTORS(3A,40W)

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transisotors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)