DAN222价格

参考价格:¥0.1040

型号:DAN222 品牌:on 备注:这里有DAN222多少钱,2024年最近7天走势,今日出价,今日竞价,DAN222批发/采购报价,DAN222行情走势销售排行榜,DAN222报价。
型号 功能描述 生产厂家&企业 LOGO 操作
DAN222

SOT-416/SC-90PACKAGECOMMONCATHODEDUALSWITCHINGDIODESURFACEMOUNT

CommonCathodeDualSwitchingDiodeSurfaceMount ThisCommonCathodeSiliconEpitaxialPlanarDualDiodeisdesignedforuseinultrahighspeedswitchingapplications.ThisdeviceishousedintheSOT–416/SC–90packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspac

MotorolaMotorola, Inc

摩托罗拉

Motorola
DAN222

COMMONCATHODESILICONDUALSWITCHINGDIODE

ThisCommonCathodeSiliconEpitaxialPlanarDualDiodeisdesignedforuseinultrahighspeedswitchingapplications.ThisdeviceishousedintheSOT−416/SC−90packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •Fasttrr •LowCD

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
DAN222

Ultrahighspeedswitching

Features 1)Fourtypesofpackagingareavailable. 2)Highspeed.(trr=1.5nsTyp.) 3)Suitableforhighpackingdensitylayout. 4)Highreliability. Application Ultrahighspeedswitching

DIODESDiodes Incorporated

达尔科技

DIODES
DAN222

Switchingdiode

Features 1)Fourtypesofpackagingareavailable. 2)Highreliability. 3)Highspeed.(Typicalrecoverytime=1.5ns) 4)Suitableforhighpackingdensitylayout. Applications Ultrahighspeedswitching

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
DAN222

SWITCHINGDIODE

SWITCHINGDIODE FEATURES: Powerdissipation PD:150mW(Tamb=25℃) Collectorcurrent IF:100mA Collector-basevoltage VR:80V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
DAN222

100mASwitchingDiode80Volts

Features •Highreliability •Highspeed •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
DAN222

SurfaceMountFastSwitchingDiode

Features ◇Ultra-Smallsurfacemountpackage. ◇Fastswitchingspeed. ◇Forgeneralpurposeswitchingapplications. ◇Lowconductance. Applications ◇Generalpurposeswitchingapplication.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
DAN222

BandSwitchingDiode

Features 1)Ultrasmallmoldtype.(EMD3) 2)Highreliability. Applications Ultrahighspeedswitching Construction Siliconepitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
DAN222

SwitchingDiodes

■Features ●Fourtypesofpackagingareavailable ●Highspeed ●Suitableforhighpackingdensitylayout ●Highreliability

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
DAN222

SWITCHINGDIODE

SWITCHINGDIODE FEATURES: ●Fourtypesofpackagingareavailable ●Highspeed ●Suitableforhighpackingdensitylayout ●Highreliability

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
DAN222

SWITCHINGDIODE

Features Powerdissipation PD:225mW(Tamb=25°C) PluseDrain IF:200mA ReverseVoltage VR:70V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55°Cto+150°C

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
DAN222

SurfaceMountFastSwitchingDiode

FEATURES ●Ultra-Smallsurfacemountpackage. ●Fastswitchingspeed. ●Forgeneralpurposeswitchingapplications. ●Lowconductance. APPLICATIONS ●Generalpurposeswitchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
DAN222

CommonCathodeSiliconDualSwitchingDiode

ThisCommonCathodeSiliconEpitaxialPlanarDualDiodeis designedforuseinultrahighspeedswitchingapplications.This deviceishousedintheSOT−416/SC−75packagewhichisdesigned forlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •Fasttrr •Lo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
DAN222

DUALSWITCHINGDIODESCOMMONCATHODESILICON

DESCRIPTION ThisCommonCathodeSiliconEpitaxialPlanarDualDiodeisdesignedforuseinultrahighspeedswitchingapplications.ThisdeviceishousedintheSC-89packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisatapremium. The DAN222isavailablei

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI
DAN222

SurfaceMountFastSwitchingDiode

文件:105.83 Kbytes Page:3 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
DAN222

Ultrahigh-speedswitchingdiodearrays

文件:51.75 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
DAN222

BandSwitchingDiode

文件:999.12 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
DAN222

CommonCathodeSiliconDualSwitchingDiode

文件:49.75 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CommonCathodeSiliconDualSwitchingDiode

ThisCommonCathodeSiliconEpitaxialPlanarDualDiodeis designedforuseinultrahighspeedswitchingapplications.This deviceishousedintheSOT−416/SC−75packagewhichisdesigned forlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •Fasttrr •Lo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SWITCHINGDIODE

SWITCHINGDIODE DESCRIPTION EpitaxialplanarSilicondiode FEATURES: Highspeed.(trr=1.5nsTyp.) Suitableforhighpackingdensitylayout Highreliability. APPLICATION Ultrahighspeedswitching Forportableequipment:(i.e.Mobilephone,MP3,MD,CD-ROM,DVD-ROM,Noteb

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

CommonCathodeSiliconDualSwitchingDiode

ThisCommonCathodeSiliconEpitaxialPlanarDualDiodeisdesignedforuseinultrahighspeedswitchingapplications.ThisdeviceishousedintheSOT−416/SC−90packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •Fasttrr •LowCD

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CommonCathodeSiliconDualSwitchingDiode

ThisCommonCathodeSiliconEpitaxialPlanarDualDiodeis designedforuseinultrahighspeedswitchingapplications.This deviceishousedintheSOT−416/SC−75packagewhichisdesigned forlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •Fasttrr •Lo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Switchingdiode

Features 1)Ultrasmallmoldtype.(VMD3) 2)Highreliability. Applications Ultrahighspeedswitching

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Ultrahighspeedswitching

Features 1)Fourtypesofpackagingareavailable. 2)Highspeed.(trr=1.5nsTyp.) 3)Suitableforhighpackingdensitylayout. 4)Highreliability. Application Ultrahighspeedswitching

DIODESDiodes Incorporated

达尔科技

DIODES

Switchingdiode

FEATURES ●UltraHighspeedswitching. APPLICATIONS ●Ultrasmallmoldtype. ●Highreliability.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

SOT-723Plastic-EncapsulateDiodes

SWITCHINGDIODE FEATURES ●UltraSmallSurfaceMountingType ●UltraHighSpeedSwitchingApplications ●HighReliability

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS

SWITCHINGDIODE

SWITCHINGDIODE FEATURES ●UltraSmallSurfaceMountingType ●UltraHighSpeedSwitchingApplications ●HighReliability

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

100mASwitchingDiode80Volts

Features •Highreliability •UltraHighSpeedSwitchingApplications •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequestbyadding

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SwitchingDiode

Features 1)Ultrasmallmoldtype.(VMD3) 2)Highreliability. Applications Ultrahighspeedswitching

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SwitchingDiode

Features 1)Ultrasmallmoldtype.(VMD3) 2)Highreliability. Applications Ultrahighspeedswitching

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Plastic-EncapsulateDiodes

FEATURES: Fourtypesofpackagingareavailable Highspeed Suitableforhighpackingdensitylayout Highreliability

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

CommonCathodeSiliconDualSwitchingDiode

ThisCommonCathodeSiliconEpitaxialPlanarDualDiodeis designedforuseinultrahighspeedswitchingapplications.This deviceishousedintheSOT−416/SC−75packagewhichisdesigned forlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •Fasttrr •Lo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CommonCathodeSiliconDualSwitchingDiode

ThisCommonCathodeSiliconEpitaxialPlanarDualDiodeisdesignedforuseinultrahighspeedswitchingapplications.ThisdeviceishousedintheSOT−416/SC−90packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •Fasttrr •LowCD

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BandSwitchingDiode

Features 1)Ultrasmallmoldtype.(EMD3) 2)Highreliability. Applications Ultrahighspeedswitching Construction Siliconepitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SwitchingDiode

Features Highreliability Smallmoldtype HighSpeedswitching Application Highspeedswitching

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

CommonCathodeSiliconDualSwitchingDiode

文件:49.75 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BandSwitchingDiode

文件:999.12 Kbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

100mASwitchingDiode80Volts

文件:229.92 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SWITCHINGDIODE

文件:134.22 Kbytes Page:2 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

SurfaceMountFastSwitchingDiode

文件:105.83 Kbytes Page:3 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

CommonCathodeSiliconDualSwitchingDiode

文件:49.75 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SwitchingDiode

文件:1.00246 Mbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Switchingdiode

文件:124.48 Kbytes Page:3 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

SwitchingDiode

文件:1.45655 Mbytes Page:8 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SwitchingDiode

文件:1.00246 Mbytes Page:3 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SwitchingDiode

文件:1.45655 Mbytes Page:8 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Switchingdiode

文件:124.48 Kbytes Page:3 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

CommonCathodeSiliconDualSwitchingDiode

文件:94 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:SOT-723 包装:散装 描述:DIODE ARRAY GP 80V 100MA SOT723 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SwitchingDiode

文件:1.45504 Mbytes Page:8 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

封装/外壳:SOT-723 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SWITCHING 80V 0.3A 3-PIN 分立半导体产品 二极管 - 整流器 - 阵列

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

CommonCathodeSiliconDualSwitchingDiode

文件:49.75 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

CommonCathodeSiliconDualSwitchingDiode

文件:49.75 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SwitchingDiode

文件:1.44879 Mbytes Page:8 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SwitchingDiode

文件:1.44879 Mbytes Page:8 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SwitchingDiode

文件:1.44841 Mbytes Page:8 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SwitchingDiode

文件:1.28494 Mbytes Page:6 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SwitchingDiode

文件:1.44841 Mbytes Page:8 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SwitchingDiode(Highspeedswitching)

文件:1.56332 Mbytes Page:7 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SMKMALETOSMKMALERADIUSRIGHTANGLEADAPER

文件:148.38 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

DAN222产品属性

  • 类型

    描述

  • 型号

    DAN222

  • 功能描述

    二极管 - 通用,功率,开关 80V 100mA

  • RoHS

  • 制造商

    STMicroelectronics

  • 产品

    Switching Diodes

  • 峰值反向电压

    600 V

  • 正向连续电流

    200 A

  • 最大浪涌电流

    800 A

  • 恢复时间

    2000 ns

  • 正向电压下降

    1.25 V

  • 最大反向漏泄电流

    300 uA

  • 安装风格

    SMD/SMT

  • 封装/箱体

    ISOTOP

  • 封装

    Tube

更新时间:2024-4-19 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
2016+
SOT523
18127
只做原装,假一罚十,公司可开17%增值税发票!
CJ
2020+
SOT423
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
NA
23+
NA
99999999
原装正品现货/订货,价格优惠可开票
ROHM
05+
SOT23/
2550
全新原装进口自己库存优势
Rohm Semiconductor
23+
SC-89,SOT-490
30000
二极管-分立半导体产品-原装正品
ON
23+
SC70-3
20000
原厂原装正品现货
ROHM
1436+
SOT416
30000
绝对原装进口现货可开17%增值税发票
ROHM/罗姆
2048+
SOT-523
9852
只做原装正品现货!或订货假一赔十!
ON/安森美
22+
SOT323
9850
只做原装正品假一赔十!正规渠道订货!
三年内
1983
纳立只做原装正品13590203865

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