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UN222晶体管资料
UN222别名:UN222三极管、UN222晶体管、UN222晶体三极管
UN222生产厂家:日本松下公司
UN222制作材料:Si-P/N+Di
UN222性质:表面帖装型 (SMD)_3*PNP+3*NPN
UN222封装形式:直插封装
UN222极限工作电压:10V
UN222最大电流允许值:3A
UN222最大工作频率:150MHZ
UN222引脚数:14
UN222最大耗散功率:
UN222放大倍数:
UN222图片代号:I-27
UN222vtest:10
UN222htest:150000000
- UN222atest:3
UN222wtest:0
UN222代换 UN222用什么型号代替:
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
UN222 | Transistor array to drive the small motor Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated | Panasonic 松下 | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For muting ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For muting ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For muting ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | Panasonic 松下 | |||
2.25V .25A TL-3 Miniature Screw Base Specifications Voltage Rating 2.25 Amps 0.25 Base Type Miniature Screw (E10) Bulb Type TL3 Filament C-2R MOL in/mm 0.93/23.6 MOD in/mm 0.38/9.6 Rated Life 5 Type Use 2 AA Cells | EIKO | |||
Mini 7/8 Male Internal Threads 3 Pin Field Attachable 文件:197.08 Kbytes Page:2 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
SMK MALE TO SMK MALE RADIUS RIGHT ANGLE ADAPER 文件:148.38 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
6.2 x 6.2mm Compact Tactile Switch 文件:919.95 Kbytes Page:6 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 | |||
6.2 x 6.2mm Compact Tactile Switch 文件:919.95 Kbytes Page:6 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 |
UN222产品属性
- 类型
描述
- 型号
UN222
- 制造商
PANASONIC
- 制造商全称
Panasonic Semiconductor
- 功能描述
Transistor array to drive the small motor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PANASONIC |
2002 |
SSOP14P |
3930 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PANASON/松下 |
24+ |
NA/ |
3785 |
原装现货,当天可交货,原型号开票 |
|||
PANASONIC/松下 |
25+ |
SOT23 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
PANASONIC |
06PB |
SOT23 |
5600 |
全新原装进口自己库存优势 |
|||
PANASONIC/松下 |
25+ |
SOT23 |
44047 |
PANASONIC/松下全新特价UN2226T-TX即刻询购立享优惠#长期有货 |
|||
PANASONIC/松下 |
24+ |
SOT23 |
990000 |
明嘉莱只做原装正品现货 |
|||
PANASONIC |
24+ |
QFP |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
PANASONIC |
2016+ |
SSOP14P |
6523 |
只做原装正品现货!或订货! |
|||
PANASONIC |
17+ |
SOT23/SOT323 |
9988 |
只做原装进口,自己库存 |
|||
PANASONIC |
22+23+ |
SOT23 |
8000 |
新到现货,只做原装进口 |
UN222芯片相关品牌
UN222规格书下载地址
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