UN222晶体管资料
UN222别名：UN222三极管、UN222晶体管、UN222晶体三极管
UN222生产厂家：日本松下公司
UN222制作材料：Si-P/N+Di
UN222性质：表面帖装型 （SMD）_3*PNP+3*NPN
UN222封装形式：直插封装
UN222极限工作电压：10V
UN222最大电流允许值：3A
UN222最大工作频率：150MHZ
UN222引脚数：14
UN222最大耗散功率：
UN222放大倍数：
UN222图片代号：I-27
UN222vtest：10
UN222htest：150000000
- UN222atest：3
UN222wtest：0
UN222代换 UN222用什么型号代替：
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UN222 | Transistor array to drive the small motor Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated | PANASONIC 松下 |   | |
UN222 | Transistor array to drive the small motor | PANASONIC 松下 | | |
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For muting ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For muting ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For muting ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
过压保护元件 | UNSEMI 优恩半导体 | | ||
过压保护元件 | UNSEMI 优恩半导体 | | ||
丝印代码：N9*；COMMON CATHODE SILICON DUAL SWITCHING DIODE This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Fast trr • Low CD | ONSEMI 安森美半导体 | | ||
SOT-416/SC-90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT Common Cathode Dual Switching Diode Surface Mount This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board spac | MOTOROLA 摩托罗拉 | | ||
SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Fast trr • Low CD • Available | MOTOROLA 摩托罗拉 | | ||
Field Effect Transistor Dual Gate N-Channel MOSFET Field Effect Transistor Dual Gate N–Channel MOSFET | NTE | |
UN222产品属性
- 类型
描述
- Maximum Allowable Voltage Vdc(V)：
85
- Varistor Voltage @1mA (V)：
100(90-110)
- Max Peak Current@ 8/20µs 1 pulse：
800
- Max Clamping Voltage@Ip Vc(V)：
165
- Ip (A)：
10
- CJ@ 1MHZ (PF)：
1600
- 封装类型：
2220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC |
24+ |
QFP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
PANASONIC/松下 |
22+ |
SOT-23 |
20000 |
公司只做原装 品质保障 |
|||
PANASONIC/松下 |
25+ |
SOT23 |
44047 |
PANASONIC/松下全新特价UN2226T-TX即刻询购立享优惠#长期有货 |
|||
PANASONIC |
2025+ |
SOT23 |
7695 |
全新原厂原装产品、公司现货销售 |
|||
PANASONIC |
23+ |
NA |
7095 |
专做原装正品,假一罚百! |
|||
PANASONIC/松下 |
新年份 |
SOT23 |
30000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
05+ |
原厂原装 |
3051 |
只做全新原装真实现货供应 |
||||
PANASONIC |
17+ |
SOT23/SOT323 |
9988 |
只做原装进口,自己库存 |
|||
PANASONIC/松下 |
05+ |
SOT-23 |
8550 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PANASONIC/松下 |
2450+ |
SSOP14P |
6540 |
只做原厂原装正品现货或订货!终端工厂可以申请样品! |
UN222规格书下载地址
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Union
2020-10-31
DdatasheetPDF页码索引
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