UN222晶体管资料
UN222别名：UN222三极管、UN222晶体管、UN222晶体三极管
UN222生产厂家：日本松下公司
UN222制作材料：Si-P/N+Di
UN222性质：表面帖装型 （SMD）_3*PNP+3*NPN
UN222封装形式：直插封装
UN222极限工作电压：10V
UN222最大电流允许值：3A
UN222最大工作频率：150MHZ
UN222引脚数：14
UN222最大耗散功率：
UN222放大倍数：
UN222图片代号：I-27
UN222vtest：10
UN222htest：150000000
- UN222atest：3
UN222wtest：0
UN222代换 UN222用什么型号代替：
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UN222 | Transistor array to drive the small motor Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated | PANASONIC 松下 |   | |
UN222 | Transistor array to drive the small motor | PANASONIC 松下 | | |
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 24 V to 510 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For muting ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For muting ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For muting ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | | ||
过压保护元件 | UNSEMI 优恩半导体 | | ||
过压保护元件 | UNSEMI 优恩半导体 | | ||
丝印代码：N9*；COMMON CATHODE SILICON DUAL SWITCHING DIODE This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Fast trr • Low CD | ONSEMI 安森美半导体 | | ||
SOT-416/SC-90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT Common Cathode Dual Switching Diode Surface Mount This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board spac | MOTOROLA 摩托罗拉 | | ||
SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Fast trr • Low CD • Available | MOTOROLA 摩托罗拉 | | ||
Field Effect Transistor Dual Gate N-Channel MOSFET Field Effect Transistor Dual Gate N–Channel MOSFET | NTE | |
UN222产品属性
- 类型
描述
- Maximum Allowable Voltage Vdc(V)：
85
- Varistor Voltage @1mA (V)：
100(90-110)
- Max Peak Current@ 8/20µs 1 pulse：
800
- Max Clamping Voltage@Ip Vc(V)：
165
- Ip (A)：
10
- CJ@ 1MHZ (PF)：
1600
- 封装类型：
2220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC/松下 |
2023+ |
SOT-23 |
6895 |
原厂全新正品旗舰店优势现货 |
|||
Panason |
24+ |
SOT-23 |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
05+ |
原厂原装 |
3051 |
只做全新原装真实现货供应 |
||||
PANASONIC |
16+ |
SOT23 |
30000 |
进口原装现货/价格优势! |
|||
PANASONIC |
1725+ |
? |
6500 |
只做原装进口,假一罚十 |
|||
PANASONIC/松下 |
20+ |
SOT23 |
89680 |
现货很近!原厂很远!只做原装 |
|||
PANASONIC/松下 |
22+ |
SOT-23 |
20000 |
公司只做原装 品质保障 |
|||
Panasonic(松下) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
PANASONIC |
26+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
PANASONIC/松下 |
2450+ |
SSOP14P |
6540 |
只做原厂原装正品现货或订货!终端工厂可以申请样品! |
UN222规格书下载地址
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Union
2020-10-31
DdatasheetPDF页码索引
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