N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

High Power,High Speed Applications

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Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3

HEXFET POWER MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industri

AVALANCHE ENERGY RATED N-CHANNEL POWER MOSFETS

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7/8 (22.2 mm) Single Turn Wirewound, Precision Potentiometer

FEATURES • Rugged, high-quality, all metal housing • Short length behind panel 11/32 (8.76 mm) • Ohmic value range: 5  to 40 k • Extra taps available • Bushing and servo mount types • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

RENESAS MCU

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Easy Identification and Tracing with 10-color Cable

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INTERCONNECT BATTERY HOLDERS

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NPN Power TRANSISTORS

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