TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

40A, 100V, 0.055 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching sp

High Power,High Speed Applications

DESCRIPTION • Drain Current ID=40A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies • UPS • Motor controls • High energy pulse circuits.

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

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N-CHANNEL POWER MOSFET

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N-Channel Power MOSFETs/ 40 A/ 60 V/100 V

HiRel MOSFETs

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

HEXFET Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fas

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

HEXFET Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti

MOSFET OptiMOS™5, 150 V

Features Lead free, ultra thin double sided cooling package Excellent gate charge x Ros(on) product (FOM) Very low on -resistance Ros(on) N-channel normal level 100 avalanche tested

StrongIRFETª

Features • Very low RDS(on) • Excellent gate charge x RDS(on) (FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners

StrongIRFETª

Features • Very low RDS(on) • Excellent gate charge x RDS(on) (FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners

N-Channel MOSFET Transistor

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Advanced Process Technology

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Advanced Process Technology

Advanced Process Technology

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Advanced Process Technology

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isc N-Channel MOSFET Transistor

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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StrongIRFET짧

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AVALANCHE ENERGY RATED N-CHANNEL POWER MOSFETS

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N-CHANNEL POWER MOSFET

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Limiting continuous current 130A at 85째C

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MINIATURE FUSES - 5x15 mm

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INTERCONNECT BATTERY HOLDERS

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Easy Identification and Tracing with 10-color Cable

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