位置：IRF1503PBF > IRF1503PBF详情
IRF1503PBF中文资料
IRF1503PBF数据手册规格书PDF详情
Description
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
IRF1503PBF产品属性
- 类型
描述
- 型号
IRF1503PBF
- 功能描述
MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220-3 |
112 |
||||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
24+ |
65230 |
|||||
INF |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON |
25+ |
TO-220 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
|||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
ir |
24+ |
500000 |
行业低价,代理渠道 |
||||
IR |
23+ |
TO-220AB |
6000 |
原装正品，支持实单 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
IRF1503PBF 价格
参考价格：￥10.4064
IRF1503PBF 资料下载更多...
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