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IRF1503价格

参考价格:¥10.4064

型号:IRF1503PBF 品牌:Internation.Rectifer 备注:这里有IRF1503多少钱,2026年最近7天走势,今日出价,今日竞价,IRF1503批发/采购报价,IRF1503行情走势销售排行榜,IRF1503报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1503

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

IRF

IRF1503

采用 TO-220AB 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

IRF1503

N-Channel MOSFET Transistor

文件:338.67 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

IRF

HEXFET Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fas

IRF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

IRF

30V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

HEXFET Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti

IRF

Advanced Process Technology

文件:336.52 Kbytes Page:11 Pages

IRF

Advanced Process Technology

INFINEON

英飞凌

Advanced Process Technology

文件:273.78 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:273.78 Kbytes Page:9 Pages

IRF

丝印代码:D2PAK;isc N-Channel MOSFET Transistor

文件:263.17 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:336.52 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:336.52 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:336.52 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:336.52 Kbytes Page:11 Pages

IRF

Integrated Circuit 5-Step LED Driver Circuit for Logarithmic Response

Description: The NTE1503 is an integrated circuit in a 9–Lead SIP type package designed for driving 5–LED bar graphs or dot displays so that the LEDs may light logarithmically (dB) for input signal. Brightness of the LEDs can be controlled by using the output current adjustment pin provided.

NTE

DIFFUSED T-100 SOLID STATE LAMPS

文件:237.51 Kbytes Page:3 Pages

QT

SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 15 Amperes)

文件:31.79 Kbytes Page:2 Pages

RECTRON

丽正

CCD LINEAR IMAGE SENSOR

文件:426.35 Kbytes Page:11 Pages

TOSHIBA

东芝

CCD LINEAR IMAGE SENSOR

文件:395.45 Kbytes Page:11 Pages

TOSHIBA

东芝

IRF1503产品属性

  • 类型

    描述

  • Package :

    TO-220

  • VDS max:

    30.0V

  • RDS (on)(@10V) max:

    3.3mΩ

  • RDS (on) max:

    3.3mΩ

  • Polarity :

    N

  • ID (@ TC=100°C) max:

    170.0A

  • ID  max:

    170.0A

  • ID (@ TC=25°C) max:

    240.0A

  • Ptot max:

    330.0W

  • QG :

    130.0nC 

  • Mounting :

    THT

  • RthJC max:

    0.45K/W

  • Qgd :

    41.0nC 

  • Tj max:

    175.0°C

  • VGS max:

    20.0V

更新时间:2026-5-16 11:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-263
9560
专业配单保证原装正品假一罚十
IR
25+23+
TO-263
36133
绝对原装正品全新进口深圳现货
IR
24+
TO220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
23+
D2-pak
90000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
IR
最新
TO-263
5000
正品原装品质假一赔十
IR
23+
TO220
50359
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
24+
D2-Pak
8866
IR
2023+
TO-220AB
50000
原装现货
IR
06+
TO-220
15000
原装库存

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