| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ACX7509 CLOUD METRO ROUTER Features and Benefits The ACX7509 is engineered for sustainability that changes the challenges of evolving service requirements and relentless traffic growth imposed by the 5G, IoT, and cloud era into opportunities for providers to thrive. | JUNIPERJuniper Networks, Inc. 瞻博网络 |   | ||
80A 75V N-channel Enhancement Mode Power MOSFET Description These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. Features ● Low On Resistance ● Low Gate Charge ● Fast Switching ● Low Reverse Transfer Capacitances ● 1 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
80A 75V N-channel Enhancement Mode Power MOSFET Description These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. Features ● Low On Resistance ● Low Gate Charge ● Fast Switching ● Low Reverse Transfer Capacitances ● 1 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
80A 75V N-channel Enhancement Mode Power MOSFET Description These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. Features ● Low On Resistance ● Low Gate Charge ● Fast Switching ● Low Reverse Transfer Capacitances ● 1 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
80A 75V N-channel Enhancement Mode Power MOSFET Description These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. Features ● Low On Resistance ● Low Gate Charge ● Fast Switching ● Low Reverse Transfer Capacitances ● 1 | ETCList of Unclassifed Manufacturers 未分类制造商 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
DIP64 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
25+ |
DIP |
2700 |
全新原装自家现货优势! |
||||
NEC |
24+ |
DIP64 |
990000 |
明嘉莱只做原装正品现货 |
|||
NEC |
24+ |
DIP |
69 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
MAT |
25+ |
TO-3P |
18000 |
原厂直接发货进口原装 |
|||
NEC |
22+ |
DIP64 |
8000 |
原装正品支持实单 |
|||
NEC |
2023+ |
DIP |
50000 |
原装现货 |
|||
AMD |
23+ |
PGA |
8000 |
只做原装现货 |
|||
AMD |
23+ |
PGA |
7000 |
||||
NEC |
2407+ |
DIP |
7750 |
原装现货!实单直说!特价! |
IR7509规格书下载地址
IR7509参数引脚图相关
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- irf630
- irf540n
- irf540
- IRAE900
- IRAE700
- IRAE500
- IRAE410
- IRADK31
- IRADK10
- IR-950
- IR94559
- IR94558
- IR9331
- IR91B
- IR9022N
- IR9022
- IR900
- IR-880
- IR8400P
- IR8200B
- IR8200
- IR-820
- IR80186
- IR7606TR
- IR7606
- IR7604
- IR7603TR
- IR7603
- IR7601
- IR75HQ0401F
- IR7583IREZ
- IR7560
- IR7555TR
- IR7555
- IR7535
- IR7534D1
- IR7534
- IR7530
- IR752E
- IR7524
- IR7523
- IR75-21C/TR8
- IR7521
- IR7507TR
- IR7507IR
- IR7507
- IR7506TR
- IR7506
- IR7504TR
- IR7504
- IR7503
- IR7501
- IR75-0038N
- IR75-0038
- IR75-0032
- IR75-0025
- IR-750
- IR74F015
- IR7495PBF
- IR7494
- IR7493TRPBF
- IR7493
- IR7492
- IR7393C
- IR7373C
- IR-70
- IR-650
- IR6320G
- IR6311G
- IR6226
- IR6224
- IR6220
- IR6216
- IR6210
- IR-60L2
- IR-60
- IR533C
- IR5001S
- IR5001
- IR-475
- IR-4509
- IR4428S
- IR4428
IR7509数据表相关新闻
IRF1404PBF
进口代理
2025-4-2IR3889MTRPBF
The IR3889 OptiMOSTM系列IPOL 是一款易于使用、完全集成的 DC-DC 降压稳压器。IR3889 具有板载 PWM 控制器和集成自举二极管的 OptiMOS™ MOSFET 是一种小尺寸解决方案，可提供高效的电力传输。此外，它采用快速恒定导通时间（COT）控制方案，简化了设计工作并实现了快速控制
2023-11-13IR3899MTRPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2022-2-7IRA-S210ST01
IRA-S210ST01，全新原装现货当天发货或门市自取0755-82732291.
2020-2-17IRF130CHP1100，IRF1310N，IRF1310NL，IRF1310NS，IRF1404PBF
IRF130CHP1100，IRF1310N，IRF1310NL，IRF1310NS，IRF1404PBF
2020-1-12IR51H224-自激式半桥
特点 ·输出功率MOSFET在半桥配置 ·高侧栅极驱动器引导操作设计 ·自举二极管集成包（HD型） ·精确的定时控制两个功率MOSFET匹配延迟获得50％的占空比匹配死区的1.2us ·内部振荡器具有可编程的频率 ·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰 ·微功率启动 说明 该IR51H（四）XXX是完整的高电压，高转速，selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术，随着的HEXFET®功率MOSFET技术，使
2013-2-8
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
