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IR2106STR价格
参考价格：￥6.5621
型号：IR2106STRPBF 品牌：International 备注：这里有IR2106STR多少钱，2026年最近7天走势，今日出价，今日竞价，IR2106STR批发/采购报价，IR2106STR行情走势销售排行榜，IR2106STR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IR2106STR | 封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器 | INFINEON 英飞凌 |   | |
HIGH AND LOW SIDE DRIVER Description The IR2106(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or | IRF | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器 | INFINEON 英飞凌 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda | SUTEX | |
IR2106STR产品属性
- 类型
描述
- 型号
IR2106STR
- 功能描述
IC DRIVER HIGH/LOW 600V 8-SOIC
- RoHS
否
- 类别
集成电路(IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关
- 系列
-
- 标准包装
50
- 系列
-
- 配置
高端
- 输入类型
非反相
- 延迟时间
200ns 电流 -
- 峰
250mA
- 配置数
1
- 输出数
1 高端电压 -
- 最大（自引导启动）
600V
- 电源电压
12 V ~ 20 V
- 工作温度
-40°C ~ 125°C
- 安装类型
通孔
- 封装/外壳
8-DIP（0.300，7.62mm）
- 供应商设备封装
8-DIP
- 包装
管件
- 其它名称
*IR2127
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
SO-8 |
6880 |
只做原装,质量保证 |
|||
IR |
2038+ |
SOP8 |
8000 |
原装正品现货假一罚十 |
|||
Infineon(英飞凌) |
25+ |
SOIC-8 |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
IR/INFINEON |
25+ |
SOP-8 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
INFINEON/英飞凌 |
22+ |
SOP-8 |
141500 |
原装现货 |
|||
INFINEON/英飞凌 |
25+ |
SOP-8 |
32000 |
INFINEON/英飞凌全新特价IR2106STRPBF即刻询购立享优惠#长期有货 |
|||
IR |
23+ |
SOP-8 |
65400 |
||||
INFINEON/英飞凌 |
2025+ |
SOIC-8 |
5000 |
原装进口价格优 请找坤融电子! |
|||
Infineon(英飞凌) |
24+ |
SOIC-8N |
6197 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
|||
INF |
21+ |
SOP |
22500 |
全新原装公司现货
|
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说明 在IR2103（S）的高电压，高速动力供养高，MOSFET和IGBT驱动器低侧参考输出通道。专有的HVIC免疫和闩锁的CMOS技术使坚固耐用单片建设。逻辑输入兼容标准CMOS或LSTTL输出，下降到3.3V逻辑。输出驱动器具有高脉冲电流缓冲级，设计为最小驱动器跨导。浮动通道可以用来驱动一个N沟道功率MOSFET在高端配置的可在高达600伏或IGBT。 特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从10至20V •欠压锁定
2013-2-9
DdatasheetPDF页码索引
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