L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION NECs UPG2106TB is a GaAs MMIC for PA driver amplifiers with variable gain functions which was developed for L-band applications. The device can operate with 3.0 V, having high gain and low distortion. FEATURES • LOW VOLTAGE OPERATION: VDD1 = VDD2 = 3.0 V, fRF = 889 to 960 MHz @

GaAs INTEGRATED CIRCUITS

FEATURES • Operation frequency : mPG2106TB : fopt = 889 to 960 MHz : mPG2110TB : fopt = 1 429 to 1 453 MHz • Supply voltage : mPG2106TB, mPG2110TB : VDD1, 2 = 2.7 to 3.3 V (3.0 V TYP.) • Circuit current : mPG2106TB, mPG2110TB : IDD = 25 mA TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V, Pout = +8 dBm •

L-BAND PA DRIVER AMPLIFIER

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

丝印代码：G1V；GaAs INTEGRATED CIRCUITS

FEATURES • Operation frequency : mPG2106TB : fopt = 889 to 960 MHz : mPG2110TB : fopt = 1 429 to 1 453 MHz • Supply voltage : mPG2106TB, mPG2110TB : VDD1, 2 = 2.7 to 3.3 V (3.0 V TYP.) • Circuit current : mPG2106TB, mPG2110TB : IDD = 25 mA TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V, Pout = +8 dBm •

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION NECs UPG2106TB is a GaAs MMIC for PA driver amplifiers with variable gain functions which was developed for L-band applications. The device can operate with 3.0 V, having high gain and low distortion. FEATURES • LOW VOLTAGE OPERATION: VDD1 = VDD2 = 3.0 V, fRF = 889 to 960 MHz @

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda