位置：首页 > IC中文资料第11022页 > IPP65R660CFD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPP65R660CFD | 650V CoolMOS CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 |   | |
IPP65R660CFD | N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.66Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f | ISC 无锡固电 | | |
IPP65R660CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 | | |
IPP65R660CFD | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFDA series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 | | ||
20V-650V汽车级MOSFET | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.66Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Superior Avalanche Rugged Technology 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | | ||
650V N-Channel Super Junction MOSFET 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | | ||
Superior Avalanche Rugged Technology 文件：188.97 Kbytes Page：7 Pages | SEMIHOW | | ||
650V N-Channel Super Junction MOSFET 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | |
IPP65R660CFD产品属性
- 类型
描述
- 型号
IPP65R660CFD
- 功能描述
MOSFET N-CH 700V 6.0A TO220
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
CoolMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON |
16 |
TO-220 |
1594 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
2450+ |
TO-220 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON/英飞凌 |
24+ |
TO-220 |
2000 |
只做原厂渠道 可追溯货源 |
|||
INFINEON |
24+ |
TO220 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
IPP65R660CFD芯片相关品牌
IPP65R660CFD规格书下载地址
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IPP65R660CFD数据表相关新闻
IPP65R190CFD
进口代理
2023-12-7IPQC60R010S7XTMA1
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原装正品现货
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https://hfx03.114ic.com/
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IPS0151/IPS0151S得到充分保护三端智能功率MOSFET，具有过电流，超温，防静电保护和漏源积极clamp.These器件结合一个HEXFET®功率MOSFET和栅极驱动器。他们提供全面的保护和在恶劣的环境中所需的高可靠性。该驱动程序允许开关时间短通过关闭提供有效的保护当温度超过165oC的功率MOSFET或当漏电流达到35A。该设备重新启动一次输入循环。雪崩活动能力显着增强夹具和覆盖最感性负载demagnetizations。 特点 •在温度关机 •在当前的关机 •有源钳位
2012-11-14
DdatasheetPDF页码索引
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