位置：首页 > IC中文资料 > IPP65R660CFDA
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPP65R660CFDA | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFDA series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 |   | |
IPP65R660CFDA | 20V-650V汽车级MOSFET | Infineon 英飞凌 | | |
N-Channel MOSFET Transistor • DESCRITION • High commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.66Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Superior Avalanche Rugged Technology 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | | ||
650V N-Channel Super Junction MOSFET 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | | ||
Superior Avalanche Rugged Technology 文件：188.97 Kbytes Page：7 Pages | SEMIHOW | | ||
650V N-Channel Super Junction MOSFET 文件：285.62 Kbytes Page：8 Pages | SEMIHOW | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFENON |
24+ |
NA/ |
3280 |
原装现货,当天可交货,原型号开票 |
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INFINEON |
1118+ |
TO-220 |
350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
23+ |
TO-220 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
|||
Infineon |
2025+ |
TO-220 |
5425 |
全新原厂原装产品、公司现货销售 |
|||
INFINEON |
23+ |
TO-220 |
17005 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
Infineon |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON/英飞凌 |
23+ |
TO-TO-220 |
55300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INFENON |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
|||
INFINEON |
23+ |
TO-220 |
8000 |
只做原装现货 |
IPP65R660CFDA芯片相关品牌
IPP65R660CFDA规格书下载地址
IPP65R660CFDA参数引脚图相关
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IPP65R660CFDA数据表相关新闻
IPP65R190CFD
进口代理
2023-12-7IPQC60R010S7XTMA1
IPQC60R010S7XTMA1
2023-7-4IPS1011SPBF
原装正品现货
2022-5-18IPP65R110CFDA INFINEON/英飞凌 21+ TO-220
https://hfx03.114ic.com/
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2019-3-27IPS0151-完全保护的功率MOSFET开关
IPS0151/IPS0151S得到充分保护三端智能功率MOSFET，具有过电流，超温，防静电保护和漏源积极clamp.These器件结合一个HEXFET®功率MOSFET和栅极驱动器。他们提供全面的保护和在恶劣的环境中所需的高可靠性。该驱动程序允许开关时间短通过关闭提供有效的保护当温度超过165oC的功率MOSFET或当漏电流达到35A。该设备重新启动一次输入循环。雪崩活动能力显着增强夹具和覆盖最感性负载demagnetizations。 特点 •在温度关机 •在当前的关机 •有源钳位
2012-11-14
DdatasheetPDF页码索引
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