650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Increased efficiency due to best in class FOM RDS(on) *Eoss and RDS(o

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.045Ω • Enhancement mode • Fast Switching Speed

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.045Ω • Enhancement mode • Fast Switching Speed

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤45mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Isc N-Channel MOSFET Transistor

• FEATURES • With To-220F package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

650V CoolMOS??C7 Power Transistor

650V CoolMOS™ C7 Power Transistor ​​​​​​​ Applications    PFC stages and hard switching PWM stages for e.g. Computing, Server,    Telecom, UPS and Solar.

650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg