型号 功能描述 生产厂家&企业 LOGO 操作
IPP60R600CP

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

Infineon

英飞凌

IPP60R600CP

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

CoolMos Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

ISC

无锡固电

CoolMos Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

Infineon

英飞凌

IPP60R600CP产品属性

  • 类型

    描述

  • 型号

    IPP60R600CP

  • 功能描述

    MOSFET COOL MOS PWR TRANS 650V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-17 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR/INFINEON
24+
NA/
3400
原装现货,当天可交货,原型号开票
INFINEO
24+
TO220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON
2016+
TO-220F
6528
房间原装进口现货假一赔十
INFINEON/英飞凌
2023+
TO-220
8000
全新原装正品,优势价格
INFINEON
24+
TO220
8500
原厂原包原装公司现货,假一赔十,低价出售
INFINEON
24+
PG-TO220-3
8866
Infineon(英飞凌)
24+
TO-220
7793
支持大陆交货,美金交易。原装现货库存。
ADI
23+
TO220
7000
INFINEON/英飞凌
22+
TO220
20000
原装现货,实单支持
INFINEON
20+
TO-220
36900
原装优势主营型号-可开原型号增税票

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