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IPP60R280E6价格
参考价格：￥6.9709
型号：IPP60R280E6 品牌：Infineon 备注：这里有IPP60R280E6多少钱，2025年最近7天走势，今日出价，今日竞价，IPP60R280E6批发/采购报价，IPP60R280E6行情走势销售排行榜，IPP60R280E6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPP60R280E6 | 600V CoolMOS E6 Power Transistor Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi | Infineon 英飞凌 |   | |
IPP60R280E6 | N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.28Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | |
IPP60R280E6 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
IPP60R280E6 | Metal Oxide Semiconductor Field Effect Transistor 文件：1.1053 Mbytes Page：17 Pages | Infineon 英飞凌 | | |
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.28Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.28Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | ||
600V CoolMOS E6 Power Transistor Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.28Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：338.85 Kbytes Page：2 Pages | ISC 无锡固电 | |
IPP60R280E6产品属性
- 类型
描述
- 型号
IPP60R280E6
- 功能描述
MOSFET N-CH 650V 13.8A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon/英飞凌 |
24+ |
PG-TO220-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon(英飞凌) |
2447 |
PG-TO220-3 |
115000 |
500个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
inf进口原 |
23+ |
TO-220 |
7300 |
专注配单,只做原装进口现货 |
|||
ADI |
23+ |
TO-220 |
7000 |
||||
Infineon/英飞凌 |
2025+ |
PG-TO220-3 |
8000 |
||||
INFINEON/英飞凌 |
2023+ |
TO-220 |
3500 |
全新原装正品,优势价格 |
|||
INFINEON/英飞凌 |
24+ |
TO-220 |
47186 |
郑重承诺只做原装进口现货 |
|||
INFINEON/英飞凌 |
2450+ |
TO220 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
INFINEO |
24+ |
TO220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
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IPP60R280E6规格书下载地址
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2013-2-19
DdatasheetPDF页码索引
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