MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V

Features • Optimized for a wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

isc N-Channel MOSFET Transistor

文件：337.47 Kbytes Page：2 Pages

20V-300V N-Channel Power MOSFET

OptiMOS3 Power-Transistor

文件：316.91 Kbytes Page：10 Pages

OptiMOS3 Power-Transistor

文件：316.91 Kbytes Page：10 Pages

OptiMOS ™ 5 功率 MOSFET 100 V，采用 TO-220 封装

isc N-Channel MOSFET Transistor

文件：337.88 Kbytes Page：2 Pages

OptiMOS짧5 Power-Transistor, 100 V

文件：1.69373 Mbytes Page：11 Pages

Ideal for high frequency switching and sync. rec

文件：1.86559 Mbytes Page：12 Pages

OptiMOS짧5 Power-Transistor, 100 V

文件：1.69373 Mbytes Page：11 Pages

StrongIRFET ™ 2 单 N 沟道功率 MOSFET 100 V，采用 TO-220 封装

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

MOSFET - Power, Single N-Channel, u8FL 100 V, 30 m, 35 A

Features • Wide SOA for Linear Mode Operation • Low RDS(on) to Minimize Conduction Losses • High Peak UIS Current Capability for Ruggedness • Small Footprint (3.3 x 3.3 mm) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications •