N-ChannelMOSFETTransistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.34Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤340mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=900V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.34Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •WorldwidebestRDS,oninTO220Fullpak •Ultralowgatecharge CoolMOS™900Visdesignedfor:

CoolMOS??PowerTransistor

Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)forindustrialapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge