CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Worldwide best R DS,on in TO220 Fullpak • Ultra low gate charge CoolMOS™ 900V is designed for:

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=900V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.34Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicati

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Worldwide best R DS,on in TO262 (I2Pak) • Ultra low gate charge CoolMOS™ 900V is designed for:

CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Worldwide best R DS,on in TO220 • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS CP is designed for: • Quasi Resonant Flyback / Forward t

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤340mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation