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IPI60R199CP价格
参考价格：￥11.4241
型号：IPI60R199CP 品牌：Infineon 备注：这里有IPI60R199CP多少钱，2025年最近7天走势，今日出价，今日竞价，IPI60R199CP批发/采购报价，IPI60R199CP行情走势销售排行榜，IPI60R199CP报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPI60R199CP | CoolMOS Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve | Infineon 英飞凌 |   | |
IPI60R199CP | isc N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.199Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IPI60R199CP | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
IPI60R199CP | CoolMOS짰 Power Transistor 文件：394.05 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
IPI60R199CP | CoolMOS Power Transistor 文件：306.41 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
CoolMOS Power Transistor 文件：306.41 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
CoolMOS짰 Power Transistor 文件：394.05 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.199Ω • High peak current capability • Enhancement mode • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Hard switching SMPS topologies | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.199Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤199mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
CoolMOS Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies | Infineon 英飞凌 | | ||
CoolMos Power Transistor 文件：566.78 Kbytes Page：10 Pages | Infineon 英飞凌 | |
IPI60R199CP产品属性
- 类型
描述
- 型号
IPI60R199CP
- 功能描述
MOSFET COOL MOS PWR TRANS MAX 650V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
PG-TO262-3 |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
23+ |
TO-262 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Infineon(英飞凌) |
24+ |
TO-262 |
8145 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Infineon |
19+ |
TO-262 |
17383 |
||||
Infineon/英飞凌 |
2021+ |
PG-TO262-3 |
9600 |
原装现货，欢迎询价 |
|||
INFINEON/英飞凌 |
2450+ |
TO262 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
25+ |
TO-262 |
18000 |
全新原装正品支持含税 |
|||
Infineon/英飞凌 |
21+ |
PG-TO262-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
TO-262 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON |
1728+ |
TO-262 |
8500 |
只做原装进口,假一罚十 |
IPI60R199CP规格书下载地址
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2018-12-30
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