CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤0.199Ω • High peak current capability • Enhancement mode • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Hard switching SMPS topologies

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMos Power Transistor

文件：566.78 Kbytes Page：10 Pages

CoolMOS짰 Power Transistor

文件：405.57 Kbytes Page：10 Pages

CoolMos Power Transistor

文件：566.78 Kbytes Page：10 Pages

CoolMOS짰 Power Transistor

文件：405.57 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤0.199Ω • High peak current capability • Enhancement mode • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Hard switching SMPS topologies

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.199Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤199mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation