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IPW60R199CP价格
参考价格：￥13.5343
型号：IPW60R199CP 品牌：Infineon 备注：这里有IPW60R199CP多少钱，2025年最近7天走势，今日出价，今日竞价，IPW60R199CP批发/采购报价，IPW60R199CP行情走势销售排行榜，IPW60R199CP报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPW60R199CP | CoolMOS Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Server | Infineon 英飞凌 |   | |
IPW60R199CP | N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤199mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IPW60R199CP | CoolMOS Power Transistor 文件：659.39 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
IPW60R199CP | CoolMOS짰 Power Transistor 文件：607.97 Kbytes Page：11 Pages | Infineon 英飞凌 | | |
IPW60R199CP | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
CoolMOS Power Transistor 文件：659.39 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
CoolMOS짰 Power Transistor 文件：607.97 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.199Ω • High peak current capability • Enhancement mode • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Hard switching SMPS topologies | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.199Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤199mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
CoolMOS Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies | Infineon 英飞凌 | | ||
CoolMos Power Transistor 文件：566.78 Kbytes Page：10 Pages | Infineon 英飞凌 | |
IPW60R199CP产品属性
- 类型
描述
- 型号
IPW60R199CP
- 功能描述
MOSFET COOL MOS PWR TRANS MAX PWR 650V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
225 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
32000 |
INFINEON/英飞凌全新特价IPW60R199CP即刻询购立享优惠#长期有货 |
|||
INFINEO |
07+ |
TO-247-3 |
139 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
23+ |
PG-TO247-3 |
19850 |
原装正品,假一赔十 |
|||
INFINEON/英飞凌 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
30000 |
全新原装现货,价格优势 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Infineon/英飞凌 |
21+ |
PG-TO247-3 |
6820 |
只做原装,质量保证 |
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IPW60R199CP规格书下载地址
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DdatasheetPDF页码索引
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