N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.65Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

650V CoolMOS??CE Power Transistor

文件：1.16448 Mbytes Page：16 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.34622 Mbytes Page：17 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

Metal Oxide Semiconductor Field Effect Transistor

文件：1.34622 Mbytes Page：17 Pages

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.65Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages, hard switching PWM stages and resonant s

650V CoolMOS CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

Metal Oxide Semiconductor Field Effect Transistor

文件：1.34622 Mbytes Page：17 Pages

650V CoolMOS??CE Power Transistor

文件：1.16448 Mbytes Page：16 Pages