isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages, hard switching PWM stages and resonant s

650V CoolMOS??CE Power Transistor

文件：1.16448 Mbytes Page：16 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.34622 Mbytes Page：17 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.34622 Mbytes Page：17 Pages

650V CoolMOS??CE Power Transistor

文件：1.16448 Mbytes Page：16 Pages

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.65Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

650V CoolMOS CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications